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1. WO2020199707 - BIDIRECTIONAL POWER DEVICE AND MANUFACTURING METHOD THEREFOR

Publication Number WO/2020/199707
Publication Date 08.10.2020
International Application No. PCT/CN2020/070770
International Filing Date 07.01.2020
IPC
H01L 29/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/423 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
CPC
H01L 29/0611
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0603characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
0607for preventing surface leakage or controlling electric field concentration
0611for increasing or controlling the breakdown voltage of reverse biased devices
H01L 29/0696
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0684characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
0692Surface layout
0696of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
H01L 29/1033
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
1025Channel region of field-effect devices
1029of field-effect transistors
1033with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
H01L 29/4236
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
42312Gate electrodes for field effect devices
42316for field-effect transistors
4232with insulated gate
42356Disposition, e.g. buried gate electrode
4236within a trench, e.g. trench gate electrode, groove gate electrode
H01L 29/42364
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
42312Gate electrodes for field effect devices
42316for field-effect transistors
4232with insulated gate
42364characterised by the insulating layer, e.g. thickness or uniformity
H01L 29/7831
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7831with multiple gate structure
Applicants
  • 杭州士兰微电子股份有限公司 HANGZHOU SILAN MICROELECTRONICS CO., LTD. [CN]/[CN]
Inventors
  • 张邵华 ZHANG, Shaohua
Agents
  • 北京成创同维知识产权代理有限公司 TOWIN INTELLECTUAL PROPERTY AGENCY LTD.
Priority Data
201910268168.303.04.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) BIDIRECTIONAL POWER DEVICE AND MANUFACTURING METHOD THEREFOR
(FR) DISPOSITIF D'ALIMENTATION BIDIRECTIONNEL ET SON PROCÉDÉ DE FABRICATION
(ZH) 双向功率器件及其制造方法
Abstract
(EN)
Disclosed are a bidirectional power device and a manufacturing method therefor. The bidirectional power device comprises: a semiconductor layer; a trench located in the semiconductor layer; a gate dielectric layer located on a side wall of the trench; a control gate located at a lower portion of the trench; a shielding gate located at an upper portion of the trench; and an isolation layer located between the control gate and the shielding gate, wherein the control gate is separated from the semiconductor layer by the gate dielectric layer. In the present application, the shielding gate is located above the control gate mutually separated from the shielding gate and is separated from a source region and a drain region by means of a shielding dielectric layer; when the bidirectional power device is cut off, the shielding gate depletes charges of the source region and the drain region by means of the shielding dielectric layer, and the voltage-withstanding characteristic is improved; and when the bidirectional power device is conducted, the source region and/or the drain region and the semiconductor layer provide a low-impedance conduction path.
(FR)
L'invention concerne un dispositif d'alimentation bidirectionnel et son procédé de fabrication. Le dispositif d'alimentation bidirectionnel comprend : une couche semi-conductrice ; une tranchée située dans la couche semi-conductrice ; une couche diélectrique de grille située sur une paroi latérale de la tranchée ; une grille de commande située au niveau d'une partie inférieure de la tranchée ; une grille de blindage située au niveau d'une partie supérieure de la tranchée ; et une couche d'isolation située entre la grille de commande et la grille de blindage, la grille de commande étant séparée de la couche semi-conductrice par la couche diélectrique de grille. Dans la présente invention, la grille de blindage est située au-dessus de la grille de commande séparée mutuellement de la grille de blindage et est séparée d'une région de source et d'une région de drain au moyen d'une couche diélectrique de blindage ; lorsque le dispositif d'alimentation bidirectionnel est coupé, la grille de blindage appauvrit les charges de la région de source et de la région de drain au moyen de la couche diélectrique de blindage, et la caractéristique de résistance à la tension est améliorée ; et lorsque le dispositif d'alimentation bidirectionnel est réalisé, la région de source et/ou la région de drain et la couche semi-conductrice fournissent un trajet de conduction à faible impédance.
(ZH)
公开了一种双向功率器件及其制造方法,双向功率器件包括:半导体层;位于半导体层中的沟槽;位于所述沟槽侧壁上的栅介质层;位于所述沟槽下部的控制栅;位于所述沟槽上部的屏蔽栅;以及位于所述控制栅和所述屏蔽栅之间的隔离层,其中,所述控制栅与所述半导体层之间由所述栅介质层隔开。本申请中屏蔽栅位于彼此隔离的控制栅上方,且通过屏蔽介质层与源区和漏区隔离,双向功率器件截止时屏蔽栅通过屏蔽介质层耗尽源区和漏区的电荷,提高耐压特性;双向功率器件导通时,源区和/或漏区与半导体层提供低阻抗的导通路径。
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