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1. WO2020199705 - BIDIRECTIONAL POWER DEVICE

Publication Number WO/2020/199705
Publication Date 08.10.2020
International Application No. PCT/CN2020/070760
International Filing Date 07.01.2020
IPC
H01L 29/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/423 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
Applicants
  • 杭州士兰微电子股份有限公司 HANGZHOU SILAN MICROELECTRONICS CO., LTD. [CN]/[CN]
Inventors
  • 张邵华 ZHANG, Shaohua
Agents
  • 北京成创同维知识产权代理有限公司 TOWIN INTELLECTUAL PROPERTY AGENCY LTD.
Priority Data
201910267738.703.04.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) BIDIRECTIONAL POWER DEVICE
(FR) DISPOSITIF D'ALIMENTATION BIDIRECTIONNEL
(ZH) 双向功率器件
Abstract
(EN)
Disclosed is a bidirectional power device. The bidirectional power device comprises: a semiconductor layer (10), a trench (20) located in the semiconductor layer (10), a gate dielectric layer (21) located on a side wall of the trench (20), a control gate (22) located at a lower portion of the trench (20), and a channel area (40) located in the semiconductor layer (10) and adjacent to the control gate (22), wherein the control gate (22) and the semiconductor layer (10) are separated from each other by the gate dielectric layer (21). In the provided bidirectional power device, the channel area (40) is adjacent to the control gate (22) located at the lower portion of the trench (20), and the length of a channel can be reduced by means of reducing the width of the trench (20), thereby reducing the resistance of the channel.
(FR)
La présente invention concerne un dispositif d'alimentation bidirectionnel. Le dispositif d'alimentation bidirectionnel comprend : une couche semi-conductrice (10), une tranchée (20) située dans la couche semi-conductrice (10), une couche diélectrique de grille (21) située sur une paroi latérale de la tranchée (20), une grille de commande (22) située au niveau d'une partie inférieure de la tranchée (20), et une zone de canal (40) située dans la couche semi-conductrice (10) et adjacente à la grille de commande (22), la grille de commande (22) et la couche semi-conductrice (10) étant séparées l'une de l'autre par la couche diélectrique de grille (21). Dans le dispositif d'alimentation bidirectionnel fourni, la zone de canal (40) est adjacente à la grille de commande (22) située au niveau de la partie inférieure de la tranchée (20), et la longueur d'un canal peut être réduite au moyen de la réduction de la largeur de la tranchée (20), ce qui permet de réduire la résistance du canal.
(ZH)
一种双向功率器件,双向功率器件包括:半导体层(10);位于半导体层(10)中的沟槽(20);位于所述沟槽(20)侧壁上的栅介质层(21);位于所述沟槽(20)下部的控制栅(22);以及位于所述半导体层(10)中且邻近所述控制栅(22)的沟道区(40);其中,所述控制栅(22)与所述半导体层(10)之间由所述栅介质层(21)隔开。提供的双向功率器件中,沟道区(40)邻近位于沟槽(20)下部的控制栅(22),可以通过减小沟槽(20)的宽度来减小沟道长度,进而减小沟道电阻。
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