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1. WO2020199287 - METHOD FOR MANUFACTURING TOP LIGHT-EMITTING TYPE INDIUM GALLIUM ZINC OXIDE THIN FILM TRANSISTOR DEVICE

Publication Number WO/2020/199287
Publication Date 08.10.2020
International Application No. PCT/CN2019/084560
International Filing Date 26.04.2019
IPC
H01L 21/77 2017.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
CPC
H01L 2227/323
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2227Indexing scheme for devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate covered by group H01L27/00
32Devices including an organic light emitting device [OLED], e.g. OLED display
323Multistep processes for AMOLED
H01L 27/1225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1222with a particular composition, shape or crystalline structure of the active layer
1225with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
H01L 27/1259
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
H01L 27/1288
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
1288employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Applicants
  • 深圳市华星光电技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 罗延欢 LUO, Yanhuan
Agents
  • 深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT&TRADEMARK AGENCY
Priority Data
201910268854.004.04.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) METHOD FOR MANUFACTURING TOP LIGHT-EMITTING TYPE INDIUM GALLIUM ZINC OXIDE THIN FILM TRANSISTOR DEVICE
(FR) PROCÉDÉ DE FABRICATION DE DISPOSITIF DE TRANSISTOR À COUCHES MINCES À OXYDE DE ZINC D'INDIUM-GALLIUM DE TYPE À ÉLECTROLUMINESCENCE PAR LE HAUT
(ZH) 顶发光型氧化铟镓锌薄膜晶体管器件制造方法
Abstract
(EN)
A method for manufacturing a light-emitting type indium gallium zinc oxide thin film transistor device. The method comprises a first photolithography step (S01), a second photolithography step (S02), a gate insulating layer formation step (S03), a third photolithography step (S04), a source via-hole formation step (S05), an indium gallium zinc oxide active layer exposure step (S06), a source/drain formation step (S07), a planarization layer formation step (S08), a fourth photolithography step (S09), a fifth photolithography step (S10) and a sixth photolithography step (S11). A gate electrode and a source/drain electrode are prepared using a polyimide electrode barrier isolation column (61), and the source/drain electrode and the gate electrode can be directly formed by the electrode barrier isolation column (61), such that three photomasks are reduced to one. Moreover, polyimide, as a gate insulating layer (50), can increase channel current density, thereby simplifying the complexity of the manufacturing method and improving the production efficiency.
(FR)
L'invention concerne un procédé de fabrication d'un dispositif de transistor à couches minces à oxyde de zinc d'indium-gallium de type à électroluminescence. Le procédé comprend une première étape de photolithographie (S01), une deuxième étape de photolithographie (S02), une étape de formation de couche d'isolation de grille (S03), une troisième étape de photolithographie (S04), une étape de formation de trou d'interconnexion de source (S05), une étape d'exposition de couche active à oxyde de zinc d'indium-gallium (S06), une étape de formation de source/drain (S07), une étape de formation de couche de planarisation (S08), une quatrième étape de photolithographie (S09), une cinquième étape de photolithographie (S10) et une sixième étape de photolithographie (S11). Une électrode de grille et une électrode de source/drain sont préparées à l'aide d'une colonne d'isolation de barrière d'électrode en polyimide (61), et l'électrode de source/drain et l'électrode de grille peuvent être directement formées par la colonne d'isolation de barrière d'électrode (61), de telle sorte que trois photomasques sont réduits à un. De plus, le polyimide, en tant que couche d'isolation de grille (50), peut augmenter la densité de courant de canal, ce qui simplifie la complexité du procédé de fabrication et améliore l'efficacité de production.
(ZH)
一种发光型氧化铟镓锌薄膜晶体管器件制造方法,包括第一光刻步骤(S01)、第二光刻步骤(S02)、栅极绝缘层形成步骤(S03)、第三光刻步骤(S04)、源极过孔形成步骤(S05)、氧化铟镓锌有源层裸露步骤(S06)、源极/漏极形成步骤(S07)、平坦化层形成步骤(S08)、第四光刻步骤(S09)、第五光刻步骤(S10)、以及第六光刻步骤(S11)。通过采用聚酰亚胺电极障壁隔离柱(61)制备栅极与源极/漏极,通过电极障壁隔离柱(61)直接可形成源极/漏极与栅极,使得三道光罩减少为一道,同时聚酰亚胺作为栅极绝缘层(50)可增大沟道电流密度,藉此简化制造方法复杂度,且提升生产效率。
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