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1. WO2020198081 - HALL EFFECT PRISM SENSOR

Publication Number WO/2020/198081
Publication Date 01.10.2020
International Application No. PCT/US2020/024075
International Filing Date 21.03.2020
IPC
G01R 33/07 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices
07Hall-effect devices
G01R 15/20 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
15Details of measuring arrangements of the types provided for in groups G01R17/-G01R29/, G01R33/-G01R33/26176
14Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
20using galvano-magnetic devices, e.g. Hall-effect devices
G01R 33/09 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices
09Magneto-resistive devices
H01L 43/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02Details
04of Hall-effect devices
H01L 43/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
06Hall-effect devices
H01L 43/14 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
14for Hall-effect devices
CPC
G01R 33/072
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
07Hall effect devices
072Constructional adaptation of the sensor to specific applications
H01L 21/302
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
H01L 29/82
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
82controllable by variation of the magnetic field applied to the device
Applicants
  • LEXMARK INTERNATIONAL, INC. [US]/[US]
Inventors
  • ANDERSON, John, Douglas
  • CASTLE, Scott, Richard
  • HARDIN, Keith, Bryan
  • MUYSKENS, Robert, Henry
Agents
  • HARRIS, Wendell, W.
Priority Data
16/816,94812.03.2020US
62/822,51822.03.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) HALL EFFECT PRISM SENSOR
(FR) CAPTEUR À PRISME À EFFET HALL
Abstract
(EN)
A physically unclonable function is an object that has characteristics that make it extremely difficult or impossible to copy. An array of randomly dispersed hard (magnetized) and soft (non-magnetized) magnetic particles that may be conducting or nonconducting that are disbursed in a binder create a particular magnetic field or capacitive pattern on the surface. This surface magnetic field and capacitive variations can be considered to be a unique pattern similar to fingerprint. The Hall effect prism is a sensor that measures the effects of these patterns by sensing the deformation of currents or electric potential flowing within or around a resistive substrate material that exhibits a substantial Hall effect coefficient.
(FR)
Une fonction physiquement non clonable correspond à un objet qui a des caractéristiques qui le rendent extrêmement difficile voire impossible à copier. Un réseau de particules magnétiques dures (magnétisées) et molles (non magnétisées) dispersées de manière aléatoire pouvant être conductrices ou non conductrices qui sont versées dans un liant crée un champ magnétique ou un motif capacitif particulier sur la surface. Ce champ magnétique de surface et des variations capacitives peuvent être considérés comme un motif unique similaire à l'empreinte digitale. Le prisme à effet Hall est un capteur qui mesure les effets de ces motifs en détectant la déformation de courants ou d'un potentiel électrique circulant à l'intérieur ou autour d'un matériau de substrat résistif qui présente un coefficient d'effet Hall non négligeable.
Also published as
Latest bibliographic data on file with the International Bureau