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1. WO2020197866 - HIGH ETCH SELECTIVITY, LOW STRESS ASHABLE CARBON HARD MASK

Publication Number WO/2020/197866
Publication Date 01.10.2020
International Application No. PCT/US2020/023239
International Filing Date 18.03.2020
IPC
C23C 16/26 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
26Deposition of carbon only
C23C 16/505 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
50using electric discharges
505using radio frequency discharges
H01J 37/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
H01L 21/033 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
033comprising inorganic layers
Applicants
  • LAM RESEARCH CORPORATION [US]/[US]
Inventors
  • XUE, Jun
  • MANUMPIL, Mary Anne
  • LEE, Shih-Ked
  • TAN, Samantha SiamHwa
Agents
  • WIGGINS, Michael D.
Priority Data
62/823,21125.03.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) HIGH ETCH SELECTIVITY, LOW STRESS ASHABLE CARBON HARD MASK
(FR) MASQUE DUR EN CARBONE POUVANT ÊTRE RÉDUIT EN CENDRES À FAIBLE CONTRAINTE ET À HAUTE SÉLECTIVITÉ DE GRAVURE
Abstract
(EN)
A method for depositing a carbon ashable hard mask layer on a substrate includes a) arranging a substrate in a processing chamber; b) setting chamber pressure in a predetermined pressure range; c) setting a substrate temperature in a predetermined temperature range from -20°C to 200°C; d) supplying a gas mixture including hydrocarbon precursor and one or more other gases; and e) striking plasma by supplying RF plasma power for a first predetermined period to deposit a carbon ashable hard mask layer on the substrate.
(FR)
L'invention concerne un procédé pour le dépôt d'une couche de masque dur en carbone pouvant être réduit en cendres sur un substrat, comprenant : a) la disposition d'un substrat dans une chambre de traitement ; b) le réglage d'une pression de chambre dans une plage de pression prédéfinie ; c) le réglage d'une température de substrat dans une plage de température prédéfinie de -20 °C à 200 °C ; d) l'introduction d'un mélange de gaz comprenant un précurseur hydrocarboné et un ou plusieurs autres gaz ; et e) l'application par frappe de plasma par l'apport de puissance RF de plasma pendant une première période prédéfinie pour déposer une couche de masque dur en carbone pouvant être réduit en cendres sur le substrat.
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