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1. WO2020197105 - MICRO LED TRANSFER DEVICE AND MICRO LED TRANSFERRING METHOD

Publication Number WO/2020/197105
Publication Date 01.10.2020
International Application No. PCT/KR2020/002621
International Filing Date 24.02.2020
IPC
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
677for conveying, e.g. between different work stations
H01L 21/68 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
68for positioning, orientation or alignment
H01L 23/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
H01L 21/311 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
311Etching the insulating layers
CPC
H01L 33/0095
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0095Post-treatments of the devices, e.g. annealing, recrystallisation, short-circuit elimination
H01L 33/62
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Applicants
  • SAMSUNG ELECTRONICS CO., LTD. [KR]/[KR]
Inventors
  • LEE, Yoonsuk
  • PARK, Sangmoo
  • KWAG, Doyoung
  • KIM, Byungchul
  • KIM, Eunhye
  • OH, Minsub
  • LEE, Dongyeob
Agents
  • KIM, Tae-hun
  • JEONG, Hong-sik
Priority Data
10-2019-003518427.03.2019KR
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MICRO LED TRANSFER DEVICE AND MICRO LED TRANSFERRING METHOD
(FR) DISPOSITIF DE TRANSFERT DE MICRO-DEL ET PROCÉDÉ DE TRANSFERT DE MICRO-DEL
Abstract
(EN)
A micro light emitting diode (LED) transfer device includes a transfer part configured to transfer a relay substrate having at least one micro LED; a mask having openings corresponding to a position of the at least one micro LED; a first laser configured to irradiate a first laser light having a first wavelength to the mask; a second laser configured to irradiate a second laser light having a second wavelength different from the first wavelength to the mask; and a processor configured to: control the at least one micro LED to contact a coupling layer of a target substrate, and based on the coupling layer contacting the at least one micro LED, control the first laser to irradiate the first laser light toward the at least one micro LED, and subsequently control the second laser to irradiate the second laser light toward the at least one micro LED.
(FR)
L'invention concerne un dispositif de transfert de micro-diodes électroluminescentes (DEL) comprenant une partie de transfert configurée pour transférer un substrat de relais ayant au moins une micro-DEL ; un masque ayant des ouvertures correspondant à une position de l'au moins une micro-DEL ; un premier laser configuré pour irradier une première lumière laser ayant une première longueur d'onde vers le masque ; un second laser configuré pour irradier une seconde lumière laser ayant une seconde longueur d'onde différente de la première longueur d'onde au masque ; et un processeur configuré pour : commander l'au moins une micro-DEL pour entrer en contact avec une couche de couplage d'un substrat cible, et sur la base de la couche de couplage en contact avec l'au moins une micro-DEL, commander le premier laser pour irradier la première lumière laser vers l'au moins une micro-DEL, et commander ensuite le second laser pour irradier la seconde lumière laser vers l'au moins une micro-DEL.
Latest bibliographic data on file with the International Bureau