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1. WO2020197057 - COMPOSITION FOR ETCHING LAMINATE OF TITANIUM NITRIDE FILM AND TUNGSTEN FILM AND METHOD FOR ETCHING SEMICONDUCTOR DEVICE USING SAME

Publication Number WO/2020/197057
Publication Date 01.10.2020
International Application No. PCT/KR2019/018732
International Filing Date 30.12.2019
IPC
C09K 13/06 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
13Etching, surface-brightening or pickling compositions
04containing an inorganic acid
06with organic material
H01L 21/3213 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321After-treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
Applicants
  • 에스케이머티리얼즈 주식회사 SK-MATERIALS CO., LTD [KR]/[KR]
Inventors
  • 변지훈 BYUN, Ji Hun
Agents
  • 특허법인 공간 GHONG-GAN INTERNATIONAL PATENT LAW FIRM
Priority Data
10-2019-003366725.03.2019KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) COMPOSITION FOR ETCHING LAMINATE OF TITANIUM NITRIDE FILM AND TUNGSTEN FILM AND METHOD FOR ETCHING SEMICONDUCTOR DEVICE USING SAME
(FR) COMPOSITION DE GRAVURE D'UN STRATIFIÉ D'UN FILM DE NITRURE DE TITANE ET D'UN FILM DE TUNGSTÈNE, ET PROCÉDÉ DE GRAVURE D'UN DISPOSITIF À SEMI-CONDUCTEURS UTILISANT CETTE COMPOSITION
(KO) 질화티타늄막 및 텅스텐막 적층체 식각용 조성물 및 이를 이용한 반도체 소자의 식각방법
Abstract
(EN)
The present invention relates to a composition for etching a laminate of a titanium nitride film and a tungsten film, which maintains certain selectivity and does not exhibit a reduced etching rate in a high-temperature process in a method for manufacturing a semiconductor device even after long-term use, and has an excellent lifetime, the composition comprising a silane inorganic acid salt prepared by reacting a silane compound with phosphoric acid, nitric acid, and an inorganic acid and optionally further comprising a chelating agent.
(FR)
La présente invention concerne une composition destinée à la gravure d'un stratifié d'un film de nitrure de titane et d'un film de tungstène, qui maintient une certaine sélectivité et ne présente pas une vitesse de gravure réduite dans un traitement à haute température dans un procédé de fabrication d'un dispositif à semi-conducteurs même après une utilisation de longue durée, et présente une excellente durée de vie, la composition comprenant un sel de silane et d'acide inorganique préparé par réaction d'un composé silane avec de l'acide phosphorique, de l'acide nitrique, et un acide inorganique, et éventuellement comprenant en outre un agent chélatant.
(KO)
본 발명은 인산, 질산 및 무기산과 실란화합물을 반응시켜 제조된 실란무기산염을 포함하고 선택적으로 킬레이트제를 더 포함하는 식각용 조성물로서, 반도체소자의 제조공정에서 고온공정에서 장시간 사용시에도 일정한 선택비를 유지하고 식각속도의 저하가 없으며, 우수한 Life-time을 갖는 질화티타늄막 및 텅스텐 적층체 식각용 조성물에 관한 것이다.
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