Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020197056 - COMPOSITION FOR ETCHING LAMINATE OF TITANIUM NITRIDE FILM AND TUNGSTEN FILM, AND METHOD FOR ETCHING SEMICONDUCTOR DEVICE BY USING SAME

Publication Number WO/2020/197056
Publication Date 01.10.2020
International Application No. PCT/KR2019/018730
International Filing Date 30.12.2019
IPC
C09K 13/06 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
13Etching, surface-brightening or pickling compositions
04containing an inorganic acid
06with organic material
H01L 21/3213 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321After-treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/324 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Applicants
  • 에스케이머티리얼즈 주식회사 SK-MATERIALS CO., LTD [KR]/[KR]
Inventors
  • 변지훈 BYUN, Ji Hun
Agents
  • 특허법인 공간 GHONG-GAN INTERNATIONAL PATENT LAW FIRM
Priority Data
10-2019-003367125.03.2019KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) COMPOSITION FOR ETCHING LAMINATE OF TITANIUM NITRIDE FILM AND TUNGSTEN FILM, AND METHOD FOR ETCHING SEMICONDUCTOR DEVICE BY USING SAME
(FR) COMPOSITION DE GRAVURE D'UN STRATIFIÉ DE FILM DE NITRURE DE TITANE ET DE FILM DE TUNGSTÈNE, ET PROCÉDÉ DE GRAVURE DE DISPOSITIF SEMI-CONDUCTEUR L'UTILISANT
(KO) 질화티타늄막 및 텅스텐막 적층체 식각용 조성물 및 이를 이용한 반도체 소자의 식각방법
Abstract
(EN)
The present invention relates to a composition for etching, comprising phosphoric acid, hydrogen peroxide, and water and, more specifically, to a composition for etching a laminate of a titanium nitride film and a tungsten film, the composition additionally comprising at least one of an ammonium compound and a chelating agent so as to have excellent stability for long-term storage, while maintaining an etch selectivity of 1 by having the same etch rate when etching the tungsten film against the titanium nitride film.
(FR)
La présente invention porte sur une composition de gravure comprenant de l'acide phosphorique, du peroxyde d'hydrogène et de l'eau, et concerne plus particulièrement une composition de gravure d'un stratifié d'un film de nitrure de titane et d'un film de tungstène. La composition comprend en outre au moins un élément parmi un composé d'ammonium et un agent chélatant de façon à présenter une excellente stabilité pour un stockage à long terme, tout en maintenant une sélectivité de gravure de 1 en offrant la même vitesse de gravure lors de la gravure du film de tungstène et du film de nitrure de titane.
(KO)
본 발명은 인산, 과산화수소, 물을 포함하는 식각용 조성물에 있어서, 암모늄화합물 및 킬레이트제 중 적어도 하나 이상을 추가적으로 포함하여 질화티타늄막에 대한 텅스텐막의 식각공정시, 식각속도가 동일하여 식각선택비 1을 유지하면서 장기간 보관시에도 안정성이 우수한 질화티타늄막 및 텅스텐막 적층체 식각용 조성물에 관한 것이다.
Latest bibliographic data on file with the International Bureau