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1. WO2020196854 - COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING PATTERNED SUBSTRATE, AND COMPOUND

Publication Number WO/2020/196854
Publication Date 01.10.2020
International Application No. PCT/JP2020/014140
International Filing Date 27.03.2020
IPC
C07C 39/23 2006.01
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
CACYCLIC OR CARBOCYCLIC COMPOUNDS
39Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
23polycyclic, containing six-membered aromatic rings and other rings, with unsaturation outside the aromatic rings
C07C 211/54 2006.01
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
CACYCLIC OR CARBOCYCLIC COMPOUNDS
211Compounds containing amino groups bound to a carbon skeleton
43having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
54having amino groups bound to two or three six-membered aromatic rings
C08F 38/00 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
38Homopolymers or copolymers of compounds having one or more carbon-to-carbon triple bonds
G03F 7/11 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 7/26 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
Applicants
  • JSR株式会社 JSR CORPORATION [JP]/[JP]
Inventors
  • 中藤 慎也 NAKAFUJI Shin-ya
  • 谷口 智章 TANIGUCHI Tomoaki
  • 高梨 和憲 TAKANASHI Kazunori
Agents
  • 天野 一規 AMANO Kazunori
Priority Data
2019-06360928.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING PATTERNED SUBSTRATE, AND COMPOUND
(FR) COMPOSITION DE FORMATION DE FILM DE SOUS-COUCHE DE RÉSINE PHOTOSENSIBLE, FILM DE SOUS-COUCHE DE RÉSINE PHOTOSENSIBLE, PROCÉDÉ DE FORMATION DE FILM DE SOUS-COUCHE DE RÉSINE PHOTOSENSIBLE, PROCÉDÉ DE PRODUCTION D'UN SUBSTRAT POURVU DE MOTIFS ET COMPOSÉ
(JA) レジスト下層膜形成用組成物、レジスト下層膜、レジスト下層膜の形成方法、パターニングされた基板の製造方法及び化合物
Abstract
(EN)
The present invention addresses the problem of providing: a composition for forming a resist underlayer film excellent in terms of etching resistance, heat resistance, flatness, and bending resistance; a resist underlayer film; a method for forming a resist underlayer film; a method for producing a patterned substrate; and a compound. The composition for forming a resist underlayer film comprises a compound having a group represented by formula (1) and a solvent. In formula (1), R1 and R2 are each independently an (un)substituted aryl group in which the aryl is 6- to 30-membered or an (un)substituted heteroaryl group in which the heteroaryl is 5- to 30-membered. R3 is a hydrogen atom or an (un)substituted monovalent aliphatic hydrocarbon group having 1-10 carbon atoms. Symbol * indicates a site of bonding with the portion of the compound other than the group represented by formula (1).
(FR)
La présente invention aborde le problème consistant à fournir : une composition de formation de film de sous-couche de résine photosensible qui est excellente en termes de résistance à la gravure, de résistance thermique, de planéité, et de résistance à la flexion ; un film de sous-couche de résine photosensible ; un procédé de formation d'un film de sous-couche de résine photosensible ; un procédé de production d'un substrat pourvu de motifs ; et un composé. L'invention concerne une composition de formation d'un film de sous-couche de résine photosensible qui comprend un composé ayant un groupe représenté par la formule (1), et un solvant. Dans la formule (1), R1 et R2 sont chacun indépendamment un groupe aryle (non)substitué dans lequel l'aryle est de 6 à 30 chaînons ou un groupe hétéroaryle (non)substitué dans lequel l'hétéroaryle est de 5 à 30 chaînons. R3 représente un atome d'hydrogène ou un groupe hydrocarboné aliphatique monovalent (non)substitué ayant de 1 à 10 atomes de carbone. Le symbole * indique un site de liaison avec la partie du composé autre que le groupe représenté par la formule (1).
(JA)
エッチング耐性、耐熱性、平坦性及び曲がり耐性に優れるレジスト下層膜を形成できるレジスト下層膜形成用組成物、レジスト下層膜、レジスト下層膜の形成方法、パターニングされた基板の製造方法及び化合物を提供することを課題とする。下記式(1)で表される基を有する化合物と、溶媒とを含有するレジスト下層膜形成用組成物。下記式(1)中、R及びRはそれぞれ独立して、置換若しくは非置換の環員数6~30のアリール基又は置換若しくは非置換の環員数5~30のヘテロアリール基である。Rは、水素原子又は置換若しくは非置換の炭素数1~10の1価の脂肪族炭化水素基である。*は、上記化合物における下記式(1)で表される基以外の部分との結合部位を示す。)
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