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1. WO2020196716 - CRYSTALLINE OXIDE THIN FILM, MULTILAYER BODY AND THIN FILM TRANSISTOR

Publication Number WO/2020/196716
Publication Date 01.10.2020
International Application No. PCT/JP2020/013566
International Filing Date 26.03.2020
IPC
C23C 14/08 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
08Oxides
C30B 29/22 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
16Oxides
22Complex oxides
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
Applicants
  • 出光興産株式会社 IDEMITSU KOSAN CO.,LTD. [JP]/[JP]
Inventors
  • 川嶋 絵美 KAWASHIMA Emi
  • 井上 一吉 INOUE Kazuyoshi
  • 大山 正嗣 OYAMA Masashi
  • 柴田 雅敏 SHIBATA Masatoshi
Agents
  • 特許業務法人樹之下知的財産事務所 KINOSHITA & ASSOCIATES
Priority Data
2019-06456128.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) CRYSTALLINE OXIDE THIN FILM, MULTILAYER BODY AND THIN FILM TRANSISTOR
(FR) FILM MINCE D'OXYDE CRISTALLIN, CORPS MULTICOUCHE ET TRANSISTOR À COUCHES MINCES
(JA) 結晶酸化物薄膜、積層体及び薄膜トランジスタ
Abstract
(EN)
A crystalline oxide thin film which contains elemental In, elemental Ga and elemental Ln that is composed of one or more elements that are selected from the group consisting of La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and which is mainly composed of elemental In, while having an average crystal grain size D1 of from 0.05 μm to 0.5 μm (inclusive).
(FR)
Un film mince d'oxyde cristallin qui contient de l'In élémentaire, du Ga élémentaire et du Ln élémentaire qui est composé d'un ou de plusieurs éléments qui sont choisis dans le groupe constitué par La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb et Lu, et qui est principalement composé d'In élémentaire, tout en ayant une taille moyenne de grain cristallin D1 comprise entre 0,05 µm et 0,5 µm (inclus).
(JA)
In元素、Ga元素及びLn元素を含む結晶酸化物薄膜であって、In元素が主成分であり、Ln元素は、La、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb及びLuからなる群から選択される一種以上の元素であり、平均結晶粒径Dが、0.05μm以上、0.5μm以下である、結晶酸化物薄膜。
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