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1. WO2020196494 - DEVICE AND METHOD FOR MANUFACTURING GROUP III NITRIDE SUBSTRATE

Publication Number WO/2020/196494
Publication Date 01.10.2020
International Application No. PCT/JP2020/012954
International Filing Date 24.03.2020
IPC
C30B 29/38 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
38Nitrides
C23C 16/455 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C30B 25/20 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
18characterised by the substrate
20the substrate being of the same materials as the epitaxial layer
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants
  • 信越化学工業株式会社 SHIN-ETSU CHEMICAL CO., LTD. [JP]/[JP]
Inventors
  • 久保田 芳宏 KUBOTA, Yoshihiro
  • 永田 和寿 NAGATA, Kazutoshi
Agents
  • 田口 昌浩 TAGUCHI, Masahiro
  • 虎山 滋郎 TORAYAMA, Jiro
  • 伊藤 高志 ITO, Takashi
  • 鈴木 康義 SUZUKI, Yasuyoshi
Priority Data
2019-06335128.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) DEVICE AND METHOD FOR MANUFACTURING GROUP III NITRIDE SUBSTRATE
(FR) DISPOSITIF ET PROCÉDÉ DE FABRICATION D'UN SUBSTRAT AU NITRURE DU GROUPE III
(JA) III族窒化物基板の製造装置及び製造方法
Abstract
(EN)
This device for manufacturing a group III nitride substrate is provided with: a rotating susceptor (3) for retaining and rotating a seed crystal (2) in a reaction container (1); a heating means (9) for heating the seed crystal (2); a revolving susceptor (4) for arranging and storing, and rotating, the rotating susceptor (2); a first gas jetting port (6) for jetting a chloride gas of a group III element at a predetermined inclination angle with respect to the axial direction of the rotational axis of the revolving susceptor (4), a second gas jetting port (7) for jetting a nitrogen-containing gas, and a third gas jetting port (8) for jetting an inert gas from between the first gas jetting port (6) and the second gas jetting port (7); and an exhaust means (5) for discharging gas. This method for manufacturing a group III nitride substrate can be performed using the manufacturing device of the present invention. Through the present invention, it is possible to provide a manufacturing device and method whereby a uniform, satisfactory group III nitride crystal substrate can be obtained.
(FR)
L'invention concerne un dispositif de fabrication d'un substrat au nitrure du groupe III qui est doté de : un suscepteur rotatif (3) pour retenir et faire tourner un germe cristallin (2) dans un récipient de réaction (1) ; un moyen de chauffage (9) pour chauffer le germe cristallin (2) ; un suscepteur tournant (4) pour disposer et ranger, et faire tourner, le suscepteur rotatif (2) ; un premier orifice d'éjection de gaz (6) pour éjecter du chlorure gazeux d'un élément du groupe III selon un angle d'inclinaison prédéfini par rapport à la direction axiale de l'axe de rotation du suscepteur tournant (4), un deuxième orifice d'éjection de gaz (7) pour éjecter un gaz contenant de l'azote, et un troisième orifice d'éjection de gaz (8) pour éjecter un gaz inerte entre le premier orifice d'éjection de gaz (6) et le deuxième orifice d'éjection de gaz (7) ; et un moyen d'évacuation (5) pour évacuer le gaz. Ce procédé de fabrication d'un substrat au nitrure du groupe III peut être réalisé à l'aide du dispositif de fabrication de la présente invention. Grâce à la présente invention, il est possible de fournir un dispositif et un procédé de fabrication, moyennant quoi un substrat cristallin au nitrure du groupe III uniforme et satisfaisant peut être obtenu.
(JA)
本発明のIII族窒化物基板の製造装置は反応容器(1)内で種結晶(2)を保持して回転する自転サセプター(3)と種結晶(2)を加熱する加熱手段(9)と自転サセプター(2)を配置収納して回転する公転サセプター(4)と公転サセプター(4)の回転軸の軸方向に対して所定の斜度でIII族元素の塩化物ガスを噴出する第一のガス噴出ポート(6)、窒素含有ガスを噴出する第二のガス噴出ポート(7)及び第一のガス噴出ポート(6)と第二のガス噴出ポート(7)との間から不活性ガスを噴出する第三のガス噴出ポート(8)とガスを排出する排気手段(5)とを備える。本発明のIII族窒化物基板の製造方法は本発明の製造装置を用いて行うことができる。本発明によれば、均一で良好なIII族窒化物結晶基板を得ることができる製造装置及び製造方法を提供できる。
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