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1. WO2020196061 - CONTAMINATION TREATMENT METHOD FOR SUBSTRATE TREATMENT DEVICE AND SUBSTRATE TREATMENT DEVICE

Publication Number WO/2020/196061
Publication Date 01.10.2020
International Application No. PCT/JP2020/011555
International Filing Date 16.03.2020
IPC
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
C23C 16/44 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 下村 晃司 SHIMOMURA Kouji
  • 宮谷 光太郎 MIYATANI Kotaro
  • 池内 俊之 IKEUCHI Toshiyuki
  • 嶋本 竜雲 SHIMAMOTO Ryoun
Agents
  • 特許業務法人弥生特許事務所 YAYOY PATENT OFFICE
Priority Data
2019-05511622.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) CONTAMINATION TREATMENT METHOD FOR SUBSTRATE TREATMENT DEVICE AND SUBSTRATE TREATMENT DEVICE
(FR) PROCÉDÉ DE TRAITEMENT DE CONTAMINATION POUR DISPOSITIF DE TRAITEMENT DE SUBSTRAT ET DISPOSITIF DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置の汚染処理方法、及び基板処理装置
Abstract
(EN)
[Problem] To provide a substrate treatment device supplying a halogenated gas to a treatment container, wherein contamination from a nickel halide is reduced. [Solution] A contamination treatment method for a substrate treatment device comprising: a step in which a contamination treatment gas containing an acidified gas is supplied to a space subject to a contamination treatment, said space being either a component disposition space having a constituent component, which constitutes the substrate treatment device and contains nickel, disposed therein and a gas containing halogen flowing therethrough, or being a flow path on a downstream side of the component disposition space; and next, a step in which a purging gas is supplied to the space subject to the contamination treatment.
(FR)
Le problème décrit par la présente invention est de fournir un dispositif de traitement de substrat fournissant un gaz halogéné à un récipient de traitement, la contamination d'un halogénure de nickel étant réduite. La solution selon l'invention concerne un procédé de traitement de contamination pour un dispositif de traitement de substrat comprenant : une étape dans laquelle un gaz de traitement de contamination contenant un gaz acidifié est fourni à un espace soumis à un traitement de contamination, ledit espace étant soit un espace de disposition de composant ayant un composant constitutif, qui constitue le dispositif de traitement de substrat et contient du nickel, disposé à l'intérieur de celui-ci et un gaz contenant un halogène s'écoulant à travers celui-ci, ou étant un trajet d'écoulement sur un côté aval de l'espace de disposition de composant ; et ensuite, une étape dans laquelle un gaz de purge est fourni à l'espace soumis au traitement de contamination.
(JA)
【課題】処理容器にハロゲン化ガスを供給する基板処理装置において、ニッケルハロゲン化物による汚染を低減する技術を提供する。 【解決手段】基板処理装置の汚染処理方法であって、前記基板処理装置を構成し、ニッケルを含む構成部品が配置されると共に、ハロゲンを含むガスが通流する部品配置空間であるか、前記部品配置空間の下流側の流路である汚染処理対象空間に、酸化性ガスを含む汚染処理ガスを供給する工程と、次いで前記汚染処理対象空間にパージガスを供給する工程と、を含む
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