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1. WO2020196029 - SOLID-STATE IMAGE SENSOR, METHOD FOR MANUFACTURING SOLID-STATE IMAGE SENSOR, AND SOLID-STATE IMAGING DEVICE

Publication Number WO/2020/196029
Publication Date 01.10.2020
International Application No. PCT/JP2020/011450
International Filing Date 16.03.2020
IPC
H01L 51/42 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 27/30 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
30with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
Applicants
  • ソニー株式会社 SONY CORPORATION [JP]/[JP]
  • ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]
Inventors
  • 齊藤 陽介 SAITO Yosuke
  • 大江 隆 OOE Takashi
  • 中込 湧士郎 NAKAGOME Yushiro
Agents
  • 西川 孝 NISHIKAWA Takashi
  • 稲本 義雄 INAMOTO Yoshio
  • 三浦 勇介 MIURA Yusuke
Priority Data
2019-06239828.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SOLID-STATE IMAGE SENSOR, METHOD FOR MANUFACTURING SOLID-STATE IMAGE SENSOR, AND SOLID-STATE IMAGING DEVICE
(FR) CAPTEUR D'IMAGE À SEMI-CONDUCTEUR, PROCÉDÉ DE PRODUCTION D'UN CAPTEUR D'IMAGE À SEMI-CONDUCTEUR ET DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEUR
(JA) 固体撮像素子および固体撮像素子の製造方法、並びに固体撮像装置
Abstract
(EN)
The present invention relates to a solid-state image sensor, a method for manufacturing a solid-state image sensor, and a solid-state imaging device, such that the photoelectric conversion efficiency of a blue light organic photoelectric transducer can be increased. In the present invention, an organic photoelectric conversion layer is formed by mixing a first organic semiconductor comprising a perylene derivative and having a property of absorbing blue light, a second organic semiconductor having a property of absorbing blue light and having a property as a hole transport material having crystallinity, and a third organic semiconductor comprising a fullerene derivative. The present invention can be applied to a solid-state image sensor.
(FR)
La présente invention concerne un capteur d'image à semi-conducteur, un procédé de fabrication d'un capteur d'image à semi-conducteur, et un dispositif d'imagerie à semi-conducteur. Grâce à la présente invention, le rendement de conversion photoélectrique d'un transducteur photoélectrique organique à lumière bleue peut être augmentée. Dans la présente invention, une couche de conversion photoélectrique organique est formée en mélangeant un premier semi-conducteur organique qui comprend un dérivé de pérylène et qui a une propriété d'absorption de lumière bleue, un deuxième semi-conducteur organique qui a une propriété d'absorption de lumière bleue et qui a une propriété de matériau de transport de trous qui a une cristallinité, et un troisième semi-conducteur organique qui comprend un dérivé de fullerène. La présente technique peut être appliquée sur un capteur d'image CMOS.
(JA)
本技術は、青色光の有機光電変換素子の光電変換効率を高効率化させることができるようにする固体撮像素子および固体撮像素子の製造方法、並びに固体撮像装置に関する。 青色光を吸収する特性を有するペリレン誘導体からなる第1有機半導体と、青色光に吸収する特性を有すると共に、結晶性を有するホール輸送材料としての特性を有する第2有機半導体と、フラーレン誘導体からなる第3有機半導体とを混合して有機光電変換層を形成する。本技術は、固体撮像素子に適用することができる。
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