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1. WO2020195994 - PATTERN FORMING COMPOSITION, KIT, PATTERN MANUFACTURING METHOD, PATTERN, AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD

Publication Number WO/2020/195994
Publication Date 01.10.2020
International Application No. PCT/JP2020/011328
International Filing Date 16.03.2020
IPC
C08F 20/10 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
20Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10Esters
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
B29C 59/02 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
59Surface shaping, e.g. embossing; Apparatus therefor
02by mechanical means, e.g. pressing
Applicants
  • 富士フイルム株式会社 FUJIFILM CORPORATION [JP]/[JP]
Inventors
  • 後藤 雄一郎 GOTO Yuichiro
  • 下重 直也 SHIMOJU Naoya
Agents
  • 特許業務法人特許事務所サイクス SIKs & Co.
Priority Data
2019-05455722.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PATTERN FORMING COMPOSITION, KIT, PATTERN MANUFACTURING METHOD, PATTERN, AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD
(FR) COMPOSITION DE FORMATION DE MOTIF, KIT, PROCÉDÉ DE FABRICATION DE MOTIF, MOTIF ET PROCÉDÉ DE FABRICATION D'ÉLÉMENT SEMI-CONDUCTEUR
(JA) パターン形成用組成物、キット、パターンの製造方法、パターン、および、半導体素子の製造方法
Abstract
(EN)
The purpose of the present invention is to provide a pattern forming composition that has a suppressed effect on metals and that has excellent temporal stability with respect to imprints on which molds are repeatedly used. This pattern forming composition contains a polymerizable compound, a photoinitiator, and an organic halogen compound including at least one atom selected from the group consisting of chlorine, bromine, and iodine atoms. The organic halogen compound is a compound stable against light from a mercury lamp. The contained amount of the organic halogen compound with respect to the total solid content in the pattern forming composition is 0.001-1.0 mass%.
(FR)
La présente invention concerne une composition de formation de motif qui a un effet supprimé sur les métaux et qui a une excellente stabilité temporelle par rapport à des empreintes sur lesquelles des moules sont utilisés de façon répétée. Cette composition de formation de motif contient un composé polymérisable, un photo-initiateur et un composé halogéné organique comprenant au moins un atome choisi dans le groupe constitué par les atomes de chlore, de brome et d'iode. Le composé halogéné organique est un composé stable vis-à-vis de la lumière d'une lampe à mercure. La quantité contenue du composé organique halogéné par rapport à la teneur totale en solides dans la composition de formation de motif est de 0,001 à 1,0 % en masse.
(JA)
モールドを繰り返し使用するインプリントに対しても経時安定性に優れ、かつ金属への影響も抑制されたパターン形成用組成物の提供を目的とする。 パターン形成用組成物は、重合性化合物と、光重合開始剤と、塩素原子、臭素原子およびヨウ素原子からなる群より選択される少なくとも1つの原子を含む有機ハロゲン化合物とを含有し、有機ハロゲン化合物が、水銀ランプの光に対し安定な化合物であり、有機ハロゲン化合物の含有量が、パターン形成用組成物中の全固形分に対し0.001~1.0質量%である。
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