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1. WO2020195980 - PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING METHOD

Publication Number WO/2020/195980
Publication Date 01.10.2020
International Application No. PCT/JP2020/011247
International Filing Date 13.03.2020
IPC
H05H 1/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
C23C 16/505 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
50using electric discharges
505using radio frequency discharges
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 加賀谷 宗仁 KAGAYA, Munehito
  • 川上 聡 KAWAKAMI, Satoru
  • 守屋 剛 MORIYA, Tsuyoshi
  • 松土 龍夫 MATSUDO, Tatsuo
  • 山涌 純 YAMAWAKU, Jun
  • 小野田 裕之 ONODA, Hiroyuki
Agents
  • 特許業務法人酒井国際特許事務所 SAKAI INTERNATIONAL PATENT OFFICE
Priority Data
2019-05555222.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING METHOD
(FR) DISPOSITIF ET PROCÉDÉ DE TRAITEMENT PAR PLASMA
(JA) プラズマ処理装置およびプラズマ処理方法
Abstract
(EN)
A dividing plate has insulating properties, and divides the inside of a processing vessel into a reaction chamber in which a body to be processed is placed, and a plasma generating chamber for generating plasma. Further, the dividing plate is provided, on a surface thereof on the side of the plasma generating chamber, with a first electrode, and a plurality of through holes for supplying active species included in the plasma generated in the plasma generating chamber to the reaction chamber. The second electrode is disposed facing the first electrode in the plasma generating chamber. When plasma is to be generated in the plasma generating chamber, an electric power supply unit supplies either the first electrode or the second electrode with high-frequency electric power in which high-frequency electric power in a plurality of frequencies is superimposed by phase control.
(FR)
Dans la présente invention, une plaque de séparation présente des propriétés isolantes et divise l'intérieur d'un récipient de traitement en une chambre de réaction dans laquelle un corps à traiter est placé et en une chambre de génération de plasma pour générer un plasma. En outre, la plaque de séparation est pourvue, sur une surface de celle-ci sur le côté de la chambre de génération de plasma, d'une première électrode et d'une pluralité de trous traversants pour envoyer dans la chambre de réaction, des espèces actives incluses dans le plasma généré dans la chambre de génération de plasma. La seconde électrode est disposée face à la première électrode dans la chambre de génération de plasma. Lorsque du plasma doit être généré dans la chambre de génération de plasma, une unité d'alimentation électrique fournit soit à la première soit à la seconde électrode, une puissance électrique haute fréquence dans laquelle une puissance électrique haute fréquence dans une pluralité de fréquences est superposée par commande de phase.
(JA)
仕切板は、絶縁性とされ、処理容器の内部を被処理体が載置される反応室とプラズマを生成するプラズマ生成室とを仕切る。また、仕切板は、プラズマ生成室側の面に第1の電極が設けられ、プラズマ生成室内に生成されたプラズマに含まれる活性種を反応室に供給するための複数の貫通穴が形成されている。第2の電極は、プラズマ生成室に第1の電極と対向して配置されている。電力供給部は、プラズマ生成室にプラズマを生成する際、第1の電極および第2の電極の何れか一方に、複数の周波数の高周波電力を位相制御して重畳した高周波電力を供給する。
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