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1. WO2020195918 - NON-LINEAR RESISTANCE ELEMENT, SWITCHING ELEMENT, METHOD FOR MANUFACTURING NON-LINEAR RESISTANCE ELEMENT

Publication Number WO/2020/195918
Publication Date 01.10.2020
International Application No. PCT/JP2020/010978
International Filing Date 13.03.2020
IPC
H01L 45/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H01L 49/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
49Solid state devices not provided for in groups H01L27/-H01L47/99; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
G11C 13/00 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
H01L 21/8239 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
H01L 27/105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
Applicants
  • 日本電気株式会社 NEC CORPORATION [JP]/[JP]
Inventors
  • 沼田 秀昭 NUMATA Hideaki
  • 多田 宗弘 TADA Munehiro
  • 伴野 直樹 BANNO Naoki
  • 岡本 浩一郎 OKAMOTO Koichiro
  • 井口 憲幸 IGUCHI Noriyuki
Agents
  • 棚井 澄雄 TANAI Sumio
  • 森 隆一郎 MORI Ryuichirou
  • 松沼 泰史 MATSUNUMA Yasushi
  • 伊藤 英輔 ITO Eisuke
Priority Data
2019-05933626.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) NON-LINEAR RESISTANCE ELEMENT, SWITCHING ELEMENT, METHOD FOR MANUFACTURING NON-LINEAR RESISTANCE ELEMENT
(FR) ÉLÉMENT DE RÉSISTANCE NON LINÉAIRE, ÉLÉMENT DE COMMUTATION, PROCÉDÉ DE FABRICATION D'ÉLÉMENT DE RÉSISTANCE NON LINÉAIRE
(JA) 非線形抵抗素子、スイッチング素子、非線形抵抗素子の製造方法
Abstract
(EN)
The present invention provides a non-linear resistance element provided with a first electrode made of a metal nitride, a first intermediate layer made of a metal, a non-linear resistance layer made of an amorphous chalcogenide thin film, a second intermediate layer made of a metal, and a second electrode made of a metal nitride. The first electrode, the first intermediate layer, the non-linear resistance layer, the second intermediate layer and the second electrode are stacked in the sequence listed.
(FR)
La présente invention concerne un élément de résistance non linéaire pourvu d'une première électrode constituée d'un nitrure métallique, d'une première couche intermédiaire constituée d'un métal, d'une couche de résistance non linéaire constituée d'un film mince de chalcogénure amorphe, d'une seconde couche intermédiaire constituée d'un métal, et d'une seconde électrode constituée d'un nitrure métallique. La première électrode, la première couche intermédiaire, la couche de résistance non linéaire, la seconde couche intermédiaire et la seconde électrode sont empilées selon la séquence énumérée.
(JA)
非線形抵抗素子は、金属窒化物からなる第1電極と、金属からなる第1中間層と、アモルファス・カルコゲナイド薄膜からなる非線形抵抗層と、金属からなる第2中間層と、金属窒化物からなる第2電極とを備え、第1電極、第1中間層、非線形抵抗層、第2中間層、および、第2電極が、この順に積層されている。
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