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1. WO2020195903 - FILM FORMATION METHOD AND FILM FORMATION DEVICE

Publication Number WO/2020/195903
Publication Date 01.10.2020
International Application No. PCT/JP2020/010854
International Filing Date 12.03.2020
IPC
C23C 16/01 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
01on temporary substrates, e.g. on substrates subsequently removed by etching
C23C 16/455 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/285 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283Deposition of conductive or insulating materials for electrodes
285from a gas or vapour, e.g. condensation
H01L 21/302 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H01L 21/312 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
312Organic layers, e.g. photoresist
H01L 21/316 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
316composed of oxides or glassy oxides or oxide-based glass
CPC
C23C 16/01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
01on temporary substrates, e.g. substrates subsequently removed by etching
C23C 16/455
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
H01L 21/285
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
285from a gas or vapour, e.g. condensation
H01L 21/302
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 河野 有美子 KAWANO, Yumiko
  • 東雲 秀司 AZUMO, Shuji
  • 池 進一 IKE, Shinichi
Agents
  • 伊東 忠重 ITOH, Tadashige
  • 伊東 忠彦 ITOH, Tadahiko
Priority Data
2019-05716425.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) FILM FORMATION METHOD AND FILM FORMATION DEVICE
(FR) PROCÉDÉ DE FORMATION DE FILM ET DISPOSITIF DE FORMATION DE FILM
(JA) 成膜方法および成膜装置
Abstract
(EN)
A film formation method comprising the steps of: preparing a substrate having a first region on which an oxide formed by the oxidization of a surface of an electrically conductive material is exposed and a second region on which an insulating material is exposed; feeding a boron halide gas to the substrate to substitute a film of the oxide by a film of boron oxide; feeding a gas of a fluorine-containing silane compound to the substrate to etch the film of the boron oxide in the first region and to form a self-assembled monolayer film in the second region; and forming an electrically conductive film of interest selectively in the first region on which the electrically conductive material has been exposed, among the first region and the second region, using the self-assembled monolayer film formed in the second region.
(FR)
La présente invention concerne un procédé de formation de film comprenant les étapes consistant à : préparer un substrat ayant une première région sur laquelle un oxyde formé par l'oxydation d'une surface d'un matériau électroconducteur est exposé et une seconde région sur laquelle un matériau isolant est exposé ; introduire un gaz d'halogénure de bore dans le substrat pour remplacer un film de l'oxyde par un film d'oxyde de bore ; introduire un gaz d'un composé de silane contenant du fluor dans le substrat pour attaquer le film de l'oxyde de bore dans la première région et pour former un film monocouche auto-assemblé dans la seconde région ; et former un film d'intérêt électroconducteur sélectivement dans la première région sur laquelle le matériau électroconducteur a été exposé, parmi la première région et la seconde région, à l'aide du film monocouche auto-assemblé formé dans la seconde région.
(JA)
導電材料の表面酸化によって形成される酸化物が露出する第1領域、および絶縁材料が露出する第2領域を有する基板を準備する工程と、ハロゲン化ホウ素ガスを前記基板に対して供給することにより、前記酸化物の膜を酸化ホウ素の膜に置換する工程と、フッ素を含むシラン系化合物のガスを前記基板に対して供給することにより、前記第1領域で前記酸化ホウ素の膜をエッチングすると共に、前記第2領域に自己組織化単分子膜を形成する工程と、前記第2領域に形成した前記自己組織化単分子膜を用いて、前記第1領域および前記第2領域のうちの前記導電材料が露出した前記第1領域に選択的に導電性の対象膜を形成する工程とを含む、成膜方法。
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