Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020195781 - PHOTODETECTOR

Publication Number WO/2020/195781
Publication Date 01.10.2020
International Application No. PCT/JP2020/010235
International Filing Date 10.03.2020
IPC
H01L 31/107 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
107the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/369 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
Applicants
  • パナソニックIPマネジメント株式会社 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. [JP]/[JP]
Inventors
  • 可部 達也 KABE Tatsuya
  • 新井 秀幸 ARAI Hideyuki
  • 相川 恒 AIKAWA Hisashi
  • 杉浦 裕樹 SUGIURA Yuki
  • 井上 暁登 INOUE Akito
  • 森 三佳 MORI Mitsuyoshi
  • 中西 賢太郎 NAKANISHI Kentaro
  • 坂田 祐輔 SAKATA Yusuke
Agents
  • 特許業務法人前田特許事務所 MAEDA & PARTNERS
Priority Data
2019-06329828.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PHOTODETECTOR
(FR) PHOTODÉTECTEUR
(JA) 光検出器
Abstract
(EN)
A photodetector 1000 has a p-type semiconductor substrate 10 with a first major surface S1 on which a light-receiving portion 100 with an APD 111, and a peripheral circuit portion 200 are provided, and is further provided with: a back surface electrode 300 provided on a second major surface S2 of the semiconductor substrate 10; and a p-type first isolating portion 13 provided between the light-receiving portion 100 and the peripheral circuit portion 200. The APD 111 includes, on the first major surface S1 side, an n-type region 20 and a p-epitaxial layer 12 adjoining the n-type region 20 in the Z-direction. The peripheral circuit portion 200 includes an n-type MISFET 30 provided in a p-well 14, and an n-well 21 provided so as to surround the sides and the bottom of the p-well 14.
(FR)
L'invention concerne un photodétecteur (1000) qui comporte un substrat semi-conducteur (10) de type p doté d'une première surface principale (S1) sur laquelle se trouvent une partie de réception de lumière (100) dotée d'une APD (111) et une partie de circuit périphérique (200), et qui est en outre pourvu : d'une électrode de surface arrière (300) disposée sur une seconde surface principale (S2) du substrat semi-conducteur (10) ; et d'une première partie d'isolation (13) de type p disposée entre la partie de réception de lumière (100) et la partie de circuit périphérique (200). L'APD (111) comprend, sur le côté de la première surface principale (S1), une région de type n (20) et une couche épitaxiale-p (12) adjacente à la région de type n (20) dans la direction Z. La partie de circuit périphérique (200) comprend un MISFET (30) de type n disposé dans un puits p (14), et un puits n (21) disposé de manière à entourer les côtés et la partie inférieure du puits p (14).
(JA)
光検出器1000は、APD111を有する受光部100と周辺回路部200とが、p型の半導体基板10の第1主面S1にそれぞれ設けられており、半導体基板10の第2主面S2に設けられた裏面電極300と、受光部100と周辺回路部200との間に設けられたp型の第1分離部13と、をさらに備えている。APD111は、第1主面S1側にn型領域20と、Z方向でn型領域20に接したpエピタキシャル層12と、を有している。周辺回路部200は、pウェル14に設けられたn型MISFET30と、pウェル14の側部と底部とを囲むように設けられたnウェル21と、を有している。
Latest bibliographic data on file with the International Bureau