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1. WO2020195707 - n-TYPE SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING n-TYPE SEMICONDUCTOR ELEMENT, WIRELESS COMMUNICATION DEVICE, AND MERCHANDISE TAG

Publication Number WO/2020/195707
Publication Date 01.10.2020
International Application No. PCT/JP2020/009668
International Filing Date 06.03.2020
IPC
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 21/28 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H01L 21/283 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283Deposition of conductive or insulating materials for electrodes
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 21/8234 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
H01L 27/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
Applicants
  • 東レ株式会社 TORAY INDUSTRIES, INC. [JP]/[JP]
Inventors
  • 磯貝和生 ISOGAI, Kazuki
  • 小林康宏 KOBAYASHI, Yasuhiro
  • 村瀬清一郎 MURASE, Seiichiro
Priority Data
2019-05813026.03.2019JP
2019-05813126.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) n-TYPE SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING n-TYPE SEMICONDUCTOR ELEMENT, WIRELESS COMMUNICATION DEVICE, AND MERCHANDISE TAG
(FR) ÉLÉMENT SEMI-CONDUCTEUR DE TYPE n, PROCÉDÉ DE FABRICATION D'ÉLÉMENT SEMI-CONDUCTEUR DE TYPE n, DISPOSITIF DE COMMUNICATION SANS FIL ET ÉTIQUETTE DE PRODUIT
(JA) n型半導体素子、n型半導体素子の製造方法、無線通信装置および商品タグ
Abstract
(EN)
The present invention addresses the problem of providing, by a simple process, an n-type semiconductor element which has high n-type semiconductor properties and excellent stability. The n-type semiconductor element comprises: a base material; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer that contacts the source electrode and the drain electrode; a gate insulating layer that insulates the semiconductor layer from the gate electrode; and a second insulating layer that contacts the semiconductor layer on a side of the semiconductor layer opposite the gate insulating layer. The n-type semiconductor element is characterized in that the semiconductor layer comprises nanocarbon, and the second insulating layer comprises: A. (a) a compound having a structure in which at least one group represented by general formula (1) and at least one group represented by general formula (2) are bonded to a carbon-carbon double bond or a conjugated system, and (b) a polymer; or B. a polymer that includes, in the molecular structure thereof, the remaining group of the compound (a) from which a portion of the hydrogen atom is removed from R1, R2, R3, or R4 of the compound (a), or the remaining group of the compound (a) from which a portion of the hydrogen atom is removed from the carbon-carbon double bond or the conjugated system of the compound (a).
(FR)
La présente invention aborde le problème de la fourniture, par un procédé simple, d'un élément semi-conducteur de type n qui a des propriétés semi-conductrices de type n élevées et une excellente stabilité. L'élément semi-conducteur de type n comprend : un matériau de base; une électrode de source, une électrode de drain et une électrode de grille; une couche semi-conductrice qui entre en contact avec l'électrode de source et l'électrode de drain; une couche isolante de grille qui isole la couche semi-conductrice de l'électrode de grille; et une seconde couche isolante qui est en contact avec la couche semi-conductrice sur un côté de la couche semi-conductrice à l'opposé de la couche isolante de grille. L'élément semi-conducteur de type n est caractérisé en ce que la couche semi-conductrice comprend du nanocarbone, et la seconde couche isolante comprend : A. (a) un composé ayant une structure dans laquelle au moins un groupe représenté par la formule générale (1) et au moins un groupe représenté par la formule générale (2) sont liés à une double liaison carbone-carbone ou à un système conjugué, et (b) un polymère; ou B. un polymère qui comprend, dans sa structure moléculaire, le groupe restant du composé (a) à partir de laquelle une partie de l'atome d'hydrogène est retirée de R1, R2, R3, ou R4 du composé (a), ou le groupe restant du composé (a) à partir duquel une partie de l'atome d'hydrogène est retirée de la double liaison carbone-carbone ou du système conjugué du composé (a).
(JA)
本発明は、高いn型半導体特性を有し、安定性に優れたn型半導体素子を、簡便なプロセスで提供することを課題として、基材と、ソース電極、ドレイン電極およびゲート電極と、前記ソース電極およびドレイン電極と接する半導体層と、前記半導体層を前記ゲート電極と絶縁するゲート絶縁層と、前記半導体層に対して前記ゲート絶縁層とは反対側で前記半導体層と接する第2絶縁層と、を備えたn型半導体素子であって、前記半導体層がナノカーボンを含有し、前記第2絶縁層が、 A.(a)1つの炭素-炭素二重結合または1つの共役系に、一般式(1)で表される基および一般式(2)で表される基がそれぞれ少なくとも1つ以上結合した構造を有する化合物と、 (b)ポリマーとを含有する、または、 B.化合物(a)のR、R、R若しくはRから水素原子の一部を除いた残りの基または化合物(a)の炭素-炭素二重結合若しくは共役系から水素原子の一部を除いた残りの基をその分子構造中に含むポリマーを含有する、 ことを特徴とする、n型半導体素子とする。
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