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1. WO2020195485 - METHOD AND DEVICE FOR DETECTING ABNORMAL GROWTH OF GRAPHENE

Publication Number WO/2020/195485
Publication Date 01.10.2020
International Application No. PCT/JP2020/007751
International Filing Date 26.02.2020
IPC
C01B 32/186 2017.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
32Carbon; Compounds thereof
15Nanosized carbon materials
182Graphene
184Preparation
186by chemical vapour deposition
B82Y 35/00 2011.01
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE  OR TREATMENT OF NANOSTRUCTURES
35Methods or apparatus for measurement or analysis of nanostructures
C01B 32/18 2017.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
32Carbon; Compounds thereof
15Nanosized carbon materials
18Nanoonions; Nanoscrolls; Nanohorns; Nanocones; Nanowalls
C23C 16/26 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
26Deposition of carbon only
G01N 21/956 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws, defects or contamination
95characterised by the material or shape of the object to be examined
956Inspecting patterns on the surface of objects
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 井福 亮太 IFUKU Ryota
  • 松本 貴士 MATSUMOTO Takashi
  • 藤尾 朗 FUJIO Akira
  • 齋藤 弘作 SAITO Kousaku
Agents
  • 高山 宏志 TAKAYAMA Hiroshi
Priority Data
2019-05600725.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD AND DEVICE FOR DETECTING ABNORMAL GROWTH OF GRAPHENE
(FR) PROCÉDÉ ET DISPOSITIF DE DÉTECTION DE CROISSANCE ANORMALE DE GRAPHÈNE
(JA) グラフェンの異常成長を検出する方法および装置
Abstract
(EN)
This method for detecting abnormal growth of graphene comprises preparing an examination object having a graphene film formed by CVD on a substrate, receiving light scattered by the graphene film using a dark field optical system, and detecting abnormal growth of the graphene by examining the received light.
(FR)
La présente invention concerne un procédé de détection de croissance anormale de graphène qui comprend la préparation d'un objet d'examen ayant un film de graphène formé par CVD sur un substrat, la réception de la lumière diffusée par le film de graphène à l'aide d'un système optique en champ sombre, et la détection d'une croissance anormale du graphène en examinant la lumière reçue.
(JA)
グラフェンの異常成長を検出する方法は、基板上にCVDにより形成されたグラフェン膜を有する検査対象を準備することと、暗視野光学系を用いて、グラフェン膜で散乱した光を受光することと、受光した光を検査することによりグラフェンの異常成長を検出することとを有する。
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