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1. WO2020195474 - SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE

Publication Number WO/2020/195474
Publication Date 01.10.2020
International Application No. PCT/JP2020/007669
International Filing Date 26.02.2020
IPC
F26B 21/14 2006.01
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
26DRYING
BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
21Arrangements for supplying or controlling air or gases for drying solid materials or objects
14using gases or vapours other than air or steam
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP]/[JP]
Inventors
  • ▲高▼橋 弘明 TAKAHASHI, Hiroaki
  • 白川 元 SHIRAKAWA, Hajime
Agents
  • 振角 正一 FURIKADO, Shoichi
  • 大西 一正 OHNISHI, Kazumasa
Priority Data
2019-05873526.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
(FR) PROCÉDÉ DE TRAITEMENT DE SUBSTRAT ET DISPOSITIF DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理方法および基板処理装置
Abstract
(EN)
This substrate processing method comprises: a step (step S105) in which, at a first processing part, after a wet process (step S104) has been performed on a substrate that has a pattern of recesses and protrusions formed on the surface thereof, the surface of the substrate is coated with a liquid film that includes an organic solvent, and at least the surface of the liquid film is solidified to form a solidified film; steps (steps S106, S107) in which the substrate that is coated with the solidified film is transported to a second processing part; and a step (step S108) in which, at the second processing part, a dissolution liquid is supplied to the solidified film to dissolve the solidified film, and the dissolution liquid is removed from the surface of the substrate to dry the substrate. The present invention makes it possible to ensure easy transport between processing units while reliably preventing collapse of the pattern of recesses and protrusions formed on the surface of the substrate.
(FR)
L'invention concerne un procédé de traitement de substrat comprenant : une étape (étape S105) dans laquelle, au niveau d'une première partie de traitement, après qu'un processus humide (étape S104) a été effectué sur un substrat qui a un motif d'évidements et de saillies formé sur sa surface, la surface du substrat est revêtue d'un film liquide qui comprend un solvant organique, et au moins la surface du film liquide est solidifiée pour former un film solidifié ; des étapes (étapes S106, S107) dans lesquelles le substrat qui est revêtu du film solidifié est transporté vers une seconde partie de traitement ; et une étape (étape S108) dans lequel, au niveau de la seconde partie de traitement, un liquide de dissolution est fourni au film solidifié pour dissoudre le film solidifié et le liquide de dissolution est retiré de la surface du substrat pour sécher le substrat. La présente invention permet d'assurer un transport facile entre des unités de traitement tout en empêchant de manière fiable l'effondrement du motif d'évidements et de saillies formé sur la surface du substrat.
(JA)
本発明に係る基板処理方法は、第1処理部で、表面に凹凸パターンが形成された基板に湿式処理(ステップS104)を施した後、基板の表面を有機溶剤を含む液膜で覆い、該液膜の少なくとも表面を凝固させて凝固膜を形成する工程(ステップS105)と、凝固膜で覆われた基板を第2処理部へ搬送する工程(ステップS106、S107)と、第2処理部で、凝固膜に対し溶解液を供給して凝固膜を溶解し、基板の表面から溶解液を除去して基板を乾燥させる工程(ステップS108)とを備える。基板の表面に形成された凹凸パターンの倒壊を確実に防止しながら、処理ユニット間での搬送の容易さを確保することができる。
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