Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020195428 - RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

Publication Number WO/2020/195428
Publication Date 01.10.2020
International Application No. PCT/JP2020/007073
International Filing Date 21.02.2020
IPC
C08F 8/12 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
8Chemical modification by after-treatment
12Hydrolysis
C09K 3/00 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3Materials not provided for elsewhere
G03F 7/004 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
G03F 7/039 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
Applicants
  • JSR株式会社 JSR CORPORATION [JP]/[JP]
Inventors
  • 錦織 克聡 NISHIKORI,Katsuaki
  • 森 秀斗 MORI,Shuto
  • 鈴木 準也 SUZUKI,Junya
  • 中島 浩光 NAKASHIMA,Hiromitsu
Agents
  • 特許業務法人 ユニアス国際特許事務所 UNIUS PATENT ATTORNEYS OFFICE
Priority Data
2019-06405928.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
(FR) COMPOSITION DE RÉSINE SENSIBLE AU RAYONNEMENT ET PROCÉDÉ DE FORMATION D'UN MOTIF DE RÉSERVE
(JA) 感放射線性樹脂組成物及びレジストパターンの形成方法
Abstract
(EN)
The present invention provides: a radiation-sensitive resin composition capable of manifesting adequate sensitivity, depth of focus, and process margins when a next-generation exposure technique is applied; and a method for forming a resist pattern. A radiation-sensitive resin composition containing a resin that contains structural units having phenolic hydroxyl groups, and a compound represented by formula (1). (In formula (1), Ar is a substituted or unsubstituted C6-20 aromatic ring. n is an integer of 2-4. Z+ is a monovalent onium cation. The plurality of Y each independently are polar groups. However, at least one of the plurality of Y is an -OH group or an -SH group bonded to a carbon atom that is adjacent to a carbon atom to which a COO- group is bonded.)
(FR)
La présente invention concerne une composition de résine sensible au rayonnement, susceptible de manifester des propriétés appropriées de sensibilité, de profondeur de foyer et de marges de traitement lorsqu'une technique d'exposition de la prochaine génération est appliquée ; et un procédé de formation d'un motif de réserve. L'invention concerne en particulier une composition de résine sensible au rayonnement, contenant une résine qui contient des motifs structuraux ayant des groupes hydroxyle phénoliques, et un composé représenté par la formule (1). (Dans la formule (1), Ar est un noyau aromatique en C6-C20 substitué ou non substitué ; n est un entier de 2 à 4. Z+ est un cation onium monovalent. Chacun de la pluralité de Y est d'une manière indépendante un groupe polaire. Cependant, au moins l'un de la pluralité de Y est un groupe –OH ou un groupe –SH lié à un atome de carbone qui est adjacent à un atome de carbone auquel est lié un groupe COO-.)
(JA)
次世代露光技術を適用した場合に感度や焦点深度、プロセスマージンを十分なレベルで発揮可能な感放射線性樹脂組成物及びレジストパターンの形成方法を提供する。フェノール性水酸基を有する構造単位を含む樹脂、及び下記式(1)で表される化合物を含む感放射線性樹脂組成物。 (式(1)中、Arは置換又は非置換の炭素数6~20の芳香族環である。nは2~4の整数である。Zは1価のオニウムカチオンである。複数のYはそれぞれ独立して極性基である。ただし、複数のYのうち少なくとも1つはCOO基が結合する炭素原子に隣接する炭素原子に結合する-OH基又は-SH基である。)
Latest bibliographic data on file with the International Bureau