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1. WO2020195196 - SIC COMPOSITE SUBSTRATE AND COMPOSITE SUBSTRATE FOR SEMICONDUCTOR DEVICE

Publication Number WO/2020/195196
Publication Date 01.10.2020
International Application No. PCT/JP2020/004320
International Filing Date 05.02.2020
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/203 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
203using physical deposition, e.g. vacuum deposition, sputtering
C30B 29/36 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
Applicants
  • 日本碍子株式会社 NGK INSULATORS, LTD. [JP]/[JP]
Inventors
  • 松島 潔 MATSUSHIMA Kiyoshi
  • 吉川 潤 YOSHIKAWA Jun
  • 渡邊 守道 WATANABE Morimichi
  • 宮風 里紗 MIYAKAZE Risa
Agents
  • 高村 雅晴 TAKAMURA Masaharu
  • 加島 広基 KASHIMA Hiromoto
  • 長谷川 悠 HASEGAWA Yu
Priority Data
2019-06150227.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SIC COMPOSITE SUBSTRATE AND COMPOSITE SUBSTRATE FOR SEMICONDUCTOR DEVICE
(FR) SUBSTRAT COMPOSITE DE SIC ET SUBSTRAT COMPOSITE POUR DISPOSITIF SEMI-CONDUCTEUR
(JA) SiC複合基板及び半導体デバイス用複合基板
Abstract
(EN)
Provided is a SiC composite substrate which is less susceptible to interlayer peeling, fracturing and cracking, even if subjected to machining such as grinding or polishing. This SiC composite substrate is equipped with a biaxially-oriented SiC layer in which SiC is oriented in both the c-axis direction and the a-axis direction, and a SiC polycrystalline layer which is provided on one side of the biaxially-oriented SiC layer. There are pores in the SiC composite substrate.
(FR)
L'invention concerne un substrat composite de SiC qui est moins sensible à l'écaillage, la fracturation et la fissuration entre couches, même s'il est soumis à un usinage tel qu'un meulage ou un polissage. Ce substrat composite de SiC est équipé d'une couche de SiC à orientation biaxiale dans laquelle le SiC est orienté à la fois dans la direction de l'axe c et dans la direction de l'axe a, et une couche polycristalline de SiC qui est disposée sur un côté de la couche de SiC à orientation biaxiale. Il y a des pores dans le substrat composite de SiC.
(JA)
研削及び研磨等の加工を施しても、基板の層間剥離、割れ及びクラックが生じにくい、SiC複合基板が提供される。このSiC複合基板は、SiCがc軸方向及びa軸方向ともに配向している二軸配向SiC層と、二軸配向SiC層の一面側に設けられるSiC多結晶層とを備えたものであり、SiC複合基板中には気孔が存在する。
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