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1. WO2020195151 - SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS COMPRISING SAME

Publication Number WO/2020/195151
Publication Date 01.10.2020
International Application No. PCT/JP2020/003588
International Filing Date 31.01.2020
IPC
H01L 43/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
G11C 17/16 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
17Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
14in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
16using electrically-fusible links
H01L 21/8239 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
H01L 27/105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
G11C 11/56 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
Applicants
  • ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]
Inventors
  • 岡 幹生 OKA Mikio
  • 神田 泰夫 KANDA Yasuo
  • 野口 賢治 NOGUCHI Kenji
Agents
  • 田中 秀▲てつ▼ TANAKA Hidetetsu
  • 小林 龍 KOBAYASHI Toru
  • 森 哲也 MORI Tetsuya
Priority Data
2019-05529022.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS COMPRISING SAME
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET APPAREIL ÉLECTRONIQUE LE COMPRENANT
(JA) 半導体装置及びこれを備えた電子機器
Abstract
(EN)
Provided are: a semiconductor device which is capable of efficiently increasing the capacity of a storage element to be mounted while saving space; and an electronic apparatus comprising the same. The semiconductor device comprises: a storage element which has a first conducting layer, a second conducting layer, and an insulating layer, the first conducting layer and the second conducting layer being stacked via at least the insulating layer, and which has a filament that generates at least three distinguishable resistance states by changing the combination of the state of the first conducting layer, the state of the second conducting layer, and the state of the insulating layer; and a write portion which generates at least three distinguishable resistance states by applying a blow current to the storage element.
(FR)
La présente invention concerne un dispositif à semi-conducteur qui est capable d'augmenter efficacement la capacité d'un élément de stockage à être monter tout en économisant l'espace; et un appareil électronique le comprenant. Le dispositif à semi-conducteur comprend : un élément de stockage qui a une première couche conductrice, une seconde couche conductrice et une couche isolante, la première couche conductrice et la seconde couche conductrice étant empilées par l'intermédiaire d'au moins la couche isolante, et qui a un filament qui génère au moins trois états de résistance distincts en changeant la combinaison de l'état de la première couche conductrice, de l'état de la seconde couche conductrice, et de l'état de la couche isolante; et une partie d'écriture qui génère au moins trois états de résistance distincts en appliquant un courant de soufflage à l'élément de stockage.
(JA)
搭載する記憶素子の容量を省スペースで効率よく増加させることのできる半導体装置及びこれを備えた電子機器を提供する。半導体装置は、第1導電層と、第2導電層と、絶縁層とを有し、第1導電層と第2導電層とは少なくとも絶縁層を介して積層されており、第1導電層の状態と、第2導電層の状態と、絶縁層の状態との組合せを変えることにより、少なくとも3つの識別可能な抵抗状態が生成されるフィラメントを有した記憶素子と、記憶素子に対してブロー電流を印加して少なくとも3つの識別可能な抵抗状態を生成する書き込み部とを備える。
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