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1. WO2020194971 - DOUBLE-SIDED POLISHING METHOD FOR WORKPIECE AND DOUBLE-SIDED POLISHING DEVICE FOR WORKPIECE

Publication Number WO/2020/194971
Publication Date 01.10.2020
International Application No. PCT/JP2019/051215
International Filing Date 26.12.2019
IPC
B24B 37/005 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
005Control means for lapping machines or devices
B24B 37/08 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
04designed for working plane surfaces
07characterised by the movement of the work or lapping tool
08for double side lapping
B24B 49/03 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
49Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
02according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
03according to the final size of the previously ground workpiece
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
CPC
B24B 37/005
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
005Control means for lapping machines or devices
B24B 37/08
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
04designed for working plane surfaces
07characterised by the movement of the work or lapping tool
08for double side lapping
B24B 37/12
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
11Lapping tools
12Lapping plates for working plane surfaces
B24B 37/34
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
34Accessories
B24B 49/03
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
49Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
02according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
03according to the final size of the previously ground workpiece
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 株式会社SUMCO SUMCO CORPORATION [JP]/[JP]
Inventors
  • 宮崎 裕司 MIYAZAKI Yuji
Agents
  • 杉村 憲司 SUGIMURA Kenji
Priority Data
2019-05554522.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) DOUBLE-SIDED POLISHING METHOD FOR WORKPIECE AND DOUBLE-SIDED POLISHING DEVICE FOR WORKPIECE
(FR) PROCÉDÉ DE POLISSAGE DOUBLE FACE DESTINÉ À UNE PIÈCE ET DISPOSITIF DE POLISSAGE DOUBLE FACE DESTINÉ À UNE PIÈCE
(JA) ワークの両面研磨方法及びワークの両面研磨装置
Abstract
(EN)
This double-sided polishing method for a workpiece comprises: a pre-polishing index calculation step for, after performing double-sided polishing of a previous batch, calculating an index Xp for the workpiece on which the double-sided polishing was performed; a target polishing time calculation step for calculating a target polishing time for the current batch using a prescribed prediction formula; and a double-sided polishing step for performing double-sided polishing on a workpiece according to the target polishing time. This double-sided polishing device for a workpiece comprises: a measurement unit that, after double-sided polishing of the previous batch, measures the thickness of the workpiece on which the double-sided polishing was performed; a first calculation unit that calculates the index Xp; a second calculation unit that uses a prescribed prediction formula to calculate a target polishing time Tt for the current batch; and a control unit that performs control such that double-sided polishing is performed on the workpiece according to the target polishing time Tt.
(FR)
L’invention concerne un procédé de polissage double face destiné à une pièce comprenant : une étape de calcul d'indice de pré-polissage consistant, après la réalisation d'un polissage double face d'un lot précédent, à calculer un indice Xp pour la pièce sur laquelle le polissage double face a été effectué ; une étape de calcul de temps de polissage cible consistant à calculer un temps de polissage cible pour le lot courant à l'aide d'une formule de prédiction prescrite ; et une étape de polissage double face consistant à effectuer un polissage double face sur une pièce en fonction du temps de polissage cible. Ce dispositif de polissage double face destiné à une pièce comprend : une unité de mesure qui, après polissage double face du lot précédent, mesure l'épaisseur de la pièce sur laquelle le polissage double face a été effectué ; une première unité de calcul qui calcule l'indice Xp ; une seconde unité de calcul qui applique une formule de prédiction prescrite pour calculer un temps de polissage cible Tt pour le lot courant ; et une unité de commande qui effectue une commande de sorte qu'un polissage double face soit effectué sur la pièce en fonction du temps de polissage cible Tt.
(JA)
本発明のワークの両面研磨方法は、前バッチでの両面研磨後に、該両面研磨を行ったワークに対して指標Xpを算出する、研磨前指標算出工程と、所定の予測式を用いて、前記現バッチでの目標研磨時間を算出する、目標研磨時間算出工程と、前記目標研磨時間を用いて、ワークを両面研磨する、両面研磨工程と、を含む。また、本発明のワークの両面研磨装置は、前バッチでの両面研磨後に、該両面研磨を行った前記ワークの厚さを測定する、測定部と、指標Xpを算出する、第1の計算部と、所定の予測式を用いて、前記現バッチでの目標研磨時間Ttを算出する、第2の計算部と、前記目標研磨時間Ttを用いて、前記ワークを両面研磨するように制御する、制御部と、を備える。
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