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1. WO2020194944 - METHOD FOR PRODUCING GALLIUM OXIDE SUBSTRATE, AND POLISHING SLURRY FOR GALLIUM OXIDE SUBSTRATE

Publication Number WO/2020/194944
Publication Date 01.10.2020
International Application No. PCT/JP2019/050180
International Filing Date 20.12.2019
IPC
C09K 3/14 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
B24B 37/00 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • AGC株式会社 AGC INC. [JP]/[JP]
Inventors
  • 平林 佑介 HIRABAYASHI, Yusuke
Agents
  • 伊東 忠重 ITOH, Tadashige
  • 伊東 忠彦 ITOH, Tadahiko
Priority Data
2019-06174827.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING GALLIUM OXIDE SUBSTRATE, AND POLISHING SLURRY FOR GALLIUM OXIDE SUBSTRATE
(FR) PROCÉDÉ DE PRODUCTION D'UN SUBSTRAT D'OXYDE DE GALLIUM ET SUSPENSION DE POLISSAGE POUR SUBSTRAT D'OXYDE DE GALLIUM
(JA) 酸化ガリウム基板の製造方法、および酸化ガリウム基板用の研磨スラリー
Abstract
(EN)
A method for producing a gallium oxide substrate which involves polishing the gallium oxide substrate by using a polishing slurry, wherein the polishing slurry contains water and manganese dioxide particles.
(FR)
La présente invention concerne un procédé de production d'un substrat d'oxyde de gallium qui consiste à polir le substrat d'oxyde de gallium à l'aide d'une suspension de polissage, la suspension de polissage contenant de l'eau et des particules de dioxyde de manganèse.
(JA)
研磨スラリーを用いて酸化ガリウム基板を研磨することを有し、前記研磨スラリーは、二酸化マンガンの粒子と、水とを含む、酸化ガリウム基板の製造方法。
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