Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020194802 - GROUND SUBSTRATE AND METHOD FOR PRODUCING SAME

Publication Number WO/2020/194802
Publication Date 01.10.2020
International Application No. PCT/JP2019/038594
International Filing Date 30.09.2019
IPC
C30B 29/16 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
16Oxides
H01L 21/365 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
365using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants
  • 日本碍子株式会社 NGK INSULATORS, LTD. [JP]/[JP]
Inventors
  • 渡邊 守道 WATANABE Morimichi
  • 吉川 潤 YOSHIKAWA Jun
Agents
  • 高村 雅晴 TAKAMURA Masaharu
  • 加島 広基 KASHIMA Hiromoto
  • 長谷川 悠 HASEGAWA Yu
Priority Data
2019-06360128.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) GROUND SUBSTRATE AND METHOD FOR PRODUCING SAME
(FR) SUBSTRAT DE TERRE ET SON PROCÉDÉ DE PRODUCTION
(JA) 下地基板及びその製造方法
Abstract
(EN)
Provided is a high-quality ground substrate comprising an orientation layer that is used for growing a crystal of a nitride or oxide of a group 13 element. The number of crystal defects (dislocations) in the orientation layer is significantly reduced. This ground substrate comprises an orientation layer that is used for growing a crystal of a nitride or oxide of a group 13 element. The orientation layer surface that is used for crystal growth is constituted from a material having a corundum type crystal structure and having a larger a-axis length and/or c-axis length than sapphire. The orientation layer contains a solid solution containing two or more compounds selected from the group consisting of α-Al2O3, α-Cr2O3, α-Fe2O3, α-Ti2O3, α-V2O3 and α-Rh2O3.
(FR)
L'invention porte sur un substrat de terre de haute qualité comprenant une couche d'orientation qui est utilisée pour faire croître un cristal d'un nitrure ou d'un oxyde d'un élément du groupe 13. Le nombre de défauts cristallins (dislocations) dans la couche d'orientation est considérablement réduit. Ce substrat de terre comprend une couche d'orientation qui est utilisée pour faire croître un cristal d'un nitrure ou d'un oxyde d'un élément du groupe 13. La surface de la couche d'orientation qui est utilisée pour la croissance du cristal est constituée d'un matériau comprenant une structure cristalline de type corindon et ayant une longueur d'axe a et/ou une longueur d'axe c plus importante que le saphir. La couche d'orientation contient une solution solide contenant deux ou plusieurs composés choisis dans le groupe constitué par α-Al2O3, α-Cr2O3, α-Fe2O3, α-Ti2O3, α-V2O3 et α-Rh2O3.
(JA)
13族元素の窒化物又は酸化物の結晶成長のために用いられる配向層を備え、当該配向層における結晶欠陥(転位)が顕著に低減された、高品質の下地基板が提供される。この下地基板は、13族元素の窒化物又は酸化物の結晶成長のために用いられる配向層を備えている。配向層の結晶成長に用いられる側の表面は、サファイアよりも大きいa軸長及び/又はc軸長を有するコランダム型結晶構造を有する材料で構成されている。配向層は、α-Al、α-Cr、α-Fe、α-Ti、α-V、及びα-Rhからなる群から選択される2種以上を含む固溶体を含む。
Latest bibliographic data on file with the International Bureau