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1. WO2020194771 - INORGANIC COMPOUND SEMICONDUCTOR, METHOD FOR MANUFACTURING SAME, AND OPTICAL ENERGY CONVERSION ELEMENT USING SAME

Publication Number WO/2020/194771
Publication Date 01.10.2020
International Application No. PCT/JP2019/024580
International Filing Date 20.06.2019
IPC
C23C 14/06 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
H01L 21/203 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
203using physical deposition, e.g. vacuum deposition, sputtering
H01L 31/0256 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
Applicants
  • パナソニックIPマネジメント株式会社 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. [JP]/[JP]
Inventors
  • 菊地 諒介 KIKUCHI Ryosuke
  • 中村 透 NAKAMURA Toru
  • 上野 航輝 UENO Koki
  • 藏渕 孝浩 KURABUCHI Takahiro
  • 金子 泰 KANEKO Yasushi
  • 羽藤 一仁 HATO Kazuhito
  • 大場 史康 OBA Fumiyasu
  • 熊谷 悠 KUMAGAI Yu
Agents
  • 鎌田 健司 KAMATA Kenji
  • 野村 幸一 NOMURA Koichi
Priority Data
2019-06375728.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) INORGANIC COMPOUND SEMICONDUCTOR, METHOD FOR MANUFACTURING SAME, AND OPTICAL ENERGY CONVERSION ELEMENT USING SAME
(FR) SEMI-CONDUCTEUR COMPOSÉ INORGANIQUE, SON PROCÉDÉ DE FABRICATION, ET ÉLÉMENT DE CONVERSION D'ÉNERGIE OPTIQUE L'UTILISANT
(JA) 無機化合物半導体、その製造方法、およびそれを用いた光エネルギー変換素子
Abstract
(EN)
The present invention provides a novel semiconductor material that can be used as an optical energy conversion material. This inorganic compound semiconductor includes yttrium, zinc, and nitrogen.
(FR)
La présente invention concerne un nouveau matériau semi-conducteur qui peut être utilisé comme matériau de conversion d'énergie optique. Ce semi-conducteur composé inorganique comprend de l'yttrium, du zinc et de l'azote.
(JA)
本開示は、光エネルギー変換材料として用いられ得る新規の半導体材料を提供する。本開示の無機化合物半導体は、イットリウム、亜鉛、および窒素を含む。
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