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1. WO2020194525 - DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2020/194525
Publication Date 01.10.2020
International Application No. PCT/JP2019/012938
International Filing Date 26.03.2019
IPC
G09F 9/30 2006.01
GPHYSICS
09EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30in which the desired character or characters are formed by combining individual elements
G09F 9/00 2006.01
GPHYSICS
09EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
H01L 27/30 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
30with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H05B 33/04 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
02Details
04Sealing arrangements
H05B 33/10 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Applicants
  • シャープ株式会社 SHARP KABUSHIKI KAISHA [JP]/[JP]
Inventors
  • 園田 通 SONODA Tohru
  • 越智 貴志 OCHI Takashi
  • 高橋 純平 TAKAHASHI Jumpei
Agents
  • 特許業務法人前田特許事務所 MAEDA & PARTNERS
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF D'AFFICHAGE ET SON PROCÉDÉ DE FABRICATION
(JA) 表示装置及びその製造方法
Abstract
(EN)
According to the present invention, an island-like oxide semiconductor layer (12c) is provided in a non-display region (N) inside a display region. A first opening part (Ma) is provided in first inorganic insulating films (13, 15, 17) so as to expose the oxide semiconductor layer (12c) in the non-display region (N). A common function layer is provided ranging from the display region to the non-display region (N), and a second opening part (Mb) is provided, in the common function layer, so that a peripheral end thereof is enclosed by the peripheral end of the first opening part (Ma) as seen in a plan view, and the second opening part (Mb) exposes the oxide semiconductor layer (12c).
(FR)
Selon l’invention, une couche semi-conductrice d'oxyde de type îlot (12c) est disposée dans une zone de non-affichage (N) à l'intérieur d'une zone d'affichage. Une première partie d'ouverture (Ma) est disposée dans des premiers films isolants inorganiques (13, 15, 17) de manière à exposer la couche semi-conductrice d'oxyde (12c) dans la zone de non-affichage (N). Une couche de fonction commune est disposée de la zone d'affichage à la zone de non-affichage (N), et une seconde partie d'ouverture (Mb) est disposée dans la couche de fonction commune de façon à ce qu'une extrémité périphérique de celle-ci soit entourée par l'extrémité périphérique de la première partie d'ouverture (Ma) comme dans une vue en plan, et la seconde partie d'ouverture (Mb) expose la couche semi-conductrice d'oxyde (12c).
(JA)
表示領域の内部の非表示領域(N)には、酸化物半導体層(12c)が島状に設けられ、第1無機絶縁膜(13、15、17)には、非表示領域(N)において、酸化物半導体層(12c)を露出させるように第1開口部(Ma)が設けられ、共通機能層は、表示領域から非表示領域(N)にわたるように設けられ、共通機能層には、周端が平面視で第1開口部(Ma)の周端に囲まれると共に、酸化物半導体層(12c)を露出させるように第2開口部(Mb)が設けられている。
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