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1. WO2020194414 - SUBSTRATE PROCESSING DEVICE, SEMICONDUCTOR DEVICE PRODUCTION METHOD, AND RECORDING MEDIUM

Publication Number WO/2020/194414
Publication Date 01.10.2020
International Application No. PCT/JP2019/012282
International Filing Date 22.03.2019
IPC
H01L 21/285 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283Deposition of conductive or insulating materials for electrodes
285from a gas or vapour, e.g. condensation
C23C 16/455 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
52Controlling or regulating the coating process
Applicants
  • 株式会社KOKUSAI ELECTRIC KOKUSAI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 立野 秀人 TATENO Hideto
  • 高野 智 TAKANO Satoshi
Agents
  • ポレール特許業務法人 POLAIRE I.P.C.
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE PROCESSING DEVICE, SEMICONDUCTOR DEVICE PRODUCTION METHOD, AND RECORDING MEDIUM
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT, PROCÉDÉ DE FABRICATION D'UN DISPOSITIF À SEMI-CONDUCTEUR ET SUPPORT D'ENREGISTREMENT
(JA) 基板処理装置、半導体装置の製造方法および記録媒体
Abstract
(EN)
The present invention provides technology comprising: a substrate holder that holds a plurality of substrates; a reaction tube that accommodates the substrate holder; a heating unit that heats the inside of the reaction tube; a gas supply unit that supplies a processing gas to the interior of an inner tube of the reaction tube; a discharge unit that discharges the processing gas from the interior of the reaction tube; a temperature measurement unit that measures the temperature inside the reaction tube; a reflectance measurement unit that measures the reflectance of a film formed in the interior of the reaction tube; and a control unit that performs a feedback control with respect to the film formation conditions of a film to be formed on the substrate, said control using temperature information measured by the temperature measurement unit and film reflectance information measured by the reflectance measurement unit.
(FR)
L'invention concerne une technologie comprenant : un support de substrat qui contient une pluralité de substrats ; un tube de réaction qui reçoit le support de substrat ; une unité de chauffage qui chauffe l'intérieur du tube de réaction ; une unité de fourniture de gaz qui fournit un gaz de traitement à un tube interne du tube de réaction ; une unité d'évacuation qui évacue le gaz de traitement depuis l'intérieur du tube de réaction ; une unité de mesure de température qui mesure la température de l'intérieur du tube de réaction ; une unité de mesure de réflectance qui mesure la réflectance d'un film formé à l'intérieur du tube de réaction ; et une unité de commande qui effectue une commande de rétroaction par rapport aux conditions de formation de film pour le film à former sur le substrat, une telle commande utilisant des informations de température mesurées par l'unité de mesure de température et des informations de réflectance du film mesurées par l'unité de mesure de réflectance.
(JA)
複数枚の基板を保持する基板保持具と、基板保持具を収容する反応管と、反応管内を加熱する加熱部と、反応管の内管の内部に処理ガスを供給するガス供給部と、反応管の内部から処理ガスを排気する排気部と、反応管内の温度を計測する温度計測部と、反応管の内部に形成される膜の反射率を計測する反射率計測部と、温度計測部で計測した温度情報と反射率計測部で計測した膜の反射率情報とを用いて基板に形成する膜の成膜条件をフィードバック制御する制御部とを備えて技術を提供する。
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