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1. WO2020194387 - MICRO LED ULTRAVIOLET RADIATION SOURCE

Publication Number WO/2020/194387
Publication Date 01.10.2020
International Application No. PCT/JP2019/012153
International Filing Date 22.03.2019
IPC
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/36 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
H01L 33/46 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
46Reflective coating, e.g. dielectric Bragg reflector
Applicants
  • 堺ディスプレイプロダクト株式会社 SAKAI DISPLAY PRODUCTS CORPORATION [JP]/[JP]
Inventors
  • 岸本 克彦 KISHIMOTO, Katsuhiko
Agents
  • 奥田 誠司 OKUDA Seiji
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) MICRO LED ULTRAVIOLET RADIATION SOURCE
(FR) SOURCE DE RAYONNEMENT ULTRAVIOLET À MICRO-DEL
(JA) マイクロLED紫外放射源
Abstract
(EN)
A micro LED ultraviolet radiation source according to the present disclosure comprises a crystal growth substrate (100) and a front plane (200) which includes: a plurality of micro LEDs (220), each comprising a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type; and element isolation regions (240) which are located between the micro LEDs. The element isolation regions include at least one metal plug (24) which is electrically connected to the second semiconductor layer. This device comprises: an intermediate layer (300) that includes a first contact electrode (31) electrically connected to the first semiconductor layer and a second contact electrode (32) connected to the metal plug; and a back plane (400) formed on the intermediate layer. The element isolation regions comprise a reflector (260) which reflects ultraviolet light radiated from each of the plurality of micro LEDs toward the crystal growth substrate.
(FR)
La présente invention concerne un dispositif à micro-DEL comprenant un substrat de croissance de cristaux (100) et un plan avant (200) qui comprend: une pluralité de micro-DEL (220) ayant chacune une première couche semi-conductrice (21) d'un premier type de conductivité et une seconde couche semi-conductrice (22) d'un second type de conductivité, et qui comprend également des régions d'isolement d'élément (240) situées entre les micro-DEL. Les régions d'isolation d'éléments comprennent au moins une fiche métallique (24) qui est électriquement connectée à la seconde couche semi-conductrice. Le dispositif comprend: une couche intermédiaire (300) comprenant une première électrode de contact (31) électriquement connectée à la première couche semi-conductrice et une seconde électrode de contact (32) connectée à la fiche métallique; et un plan arrière (400) formé sur la couche intermédiaire. Les régions d'isolation d'élément comprennent un réflecteur (260) qui réfléchit la lumière ultraviolette rayonnée à partir de chacune des multiples micro-DEL vers le substrat de croissance de cristaux.
(JA)
本開示のマイクロLED紫外放射源は、結晶成長基板(100)と、それぞれが第1導電型の第1半導体層(21)および第2導電型の第2半導体層(22)を有する複数のマイクロLED(220)、ならびにマイクロLEDの間に位置する素子分離領域(240)を含むフロントプレーン(200)とを備える。素子分離領域は、第2半導体層に電気的に接続された少なくともひとつの金属プラグ(24)を有する。このデバイスは、第1半導体層に電気的に接続された第1コンタクト電極(31)および金属プラグに接続された第2コンタクト電極(32)を含む中間層(300)と、中間層上に形成されたバックプレーン(400)とを備える。素子分離領域は、複数のマイクロLEDのそれぞれから放射された紫外線を結晶成長基板に向けて反射するリフレクタ(260)を備えている。
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