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1. WO2020193970 - SILICON PASSIVATION WITH THIN FILM OXIDE

Publication Number WO/2020/193970
Publication Date 01.10.2020
International Application No. PCT/GB2020/050786
International Filing Date 24.03.2020
IPC
H01L 31/0216 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
H01L 31/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/3105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 31/074 2012.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
074comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
CPC
H01L 21/02164
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02164the material being a silicon oxide, e.g. SiO2
H01L 21/02238
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
02227formation by a process other than a deposition process
0223formation by oxidation, e.g. oxidation of the substrate
02233of the semiconductor substrate or a semiconductor layer
02236group IV semiconductor
02238silicon in uncombined form, i.e. pure silicon
H01L 21/02321
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02296characterised by the treatment performed before or after the formation of the layer
02318post-treatment
02321introduction of substances into an already existing insulating layer
H01L 21/02343
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02296characterised by the treatment performed before or after the formation of the layer
02318post-treatment
02343treatment by exposure to a liquid
H01L 31/02167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02167for solar cells
H01L 31/0725
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
0725Multiple junction or tandem solar cells
Applicants
  • THE UNIVERSITY OF WARWICK [GB]/[GB]
Inventors
  • GRANT, Nicholas Ewen
  • MURPHY, John Douglas
  • POINTON, Alex Ivan
Agents
  • BARKER BRETTELL LLP
Priority Data
1904213.427.03.2019GB
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SILICON PASSIVATION WITH THIN FILM OXIDE
(FR) PASSIVATION DE SILICIUM AVEC OXYDE DE FILM MINCE
Abstract
(EN)
A thin film passivation method comprises obtaining silicon comprising a silicon surface with an oxide layer (3a, 3b) thereon; and wetting the silicon surface with the oxide layer thereon in a solution containing trifluoromethanesulfonyl (CF3SO2) groups so as to allow the trifluoromethanesulfonyl groups to interact with the oxide layer. An oxide layer of a wafer formed by such a method may comprise at least 0.1 atom% of each of fluorine, nitrogen and sulphur. The wafer may be used in a photovoltaic cell.
(FR)
L'invention concerne un procédé de passivation de film mince consistant à obtenir du silicium comprenant une surface de silicium avec une couche d'oxyde (3a, 3b) dessus ; et mouiller la surface de silicium avec la couche d'oxyde sur celle-ci dans une solution contenant des groupes trifluorométhanesulfonyle (CF3SO2) de façon à permettre aux groupes trifluorométhanesulfonyle d'interagir avec la couche d'oxyde. Une couche d'oxyde d'une tranche formée par un tel procédé peut comprendre au moins 0,1 % atomique de chacun parmi le fluor, l'azote et le soufre. La tranche peut être utilisée dans une cellule photovoltaïque.
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