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1. WO2020193903 - METHOD OF MANUFACTURING A STRUCTURE

Publication Number WO/2020/193903
Publication Date 01.10.2020
International Application No. PCT/FR2020/050531
International Filing Date 13.03.2020
IPC
H01L 21/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
56Encapsulations, e.g. encapsulating layers, coatings
H01L 23/29 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
29characterised by the material
H01L 23/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
31characterised by the arrangement
H01L 23/485 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
482consisting of lead-in layers inseparably applied to the semiconductor body
485consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
CPC
H01L 21/563
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
H01L 2224/13011
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
12Structure, shape, material or disposition of the bump connectors prior to the connecting process
13of an individual bump connector
13001Core members of the bump connector
1301Shape
13011comprising apertures or cavities, e.g. hollow bump
H01L 2224/13109
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
12Structure, shape, material or disposition of the bump connectors prior to the connecting process
13of an individual bump connector
13001Core members of the bump connector
13099Material
131with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
13101the principal constituent melting at a temperature of less than 400°C
13109Indium [In] as principal constituent
H01L 2224/13111
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
12Structure, shape, material or disposition of the bump connectors prior to the connecting process
13of an individual bump connector
13001Core members of the bump connector
13099Material
131with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
13101the principal constituent melting at a temperature of less than 400°C
13111Tin [Sn] as principal constituent
H01L 2224/13147
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
12Structure, shape, material or disposition of the bump connectors prior to the connecting process
13of an individual bump connector
13001Core members of the bump connector
13099Material
131with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
13138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
13147Copper [Cu] as principal constituent
H01L 2224/16227
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
15Structure, shape, material or disposition of the bump connectors after the connecting process
16of an individual bump connector
161Disposition
16151the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
16221the body and the item being stacked
16225the item being non-metallic, e.g. insulating substrate with or without metallisation
16227the bump connector connecting to a bond pad of the item
Applicants
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR]/[FR]
Inventors
  • CAICEDO PANQUEVA, Nohora-Lizeth
  • AIT-MANI, Abdenacer
  • NONGLATON, Guillaume
Agents
  • AHNER, Philippe
Priority Data
190304125.03.2019FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) METHOD OF MANUFACTURING A STRUCTURE
(FR) PROCEDE DE FABRICATION D'UNE STRUCTURE
Abstract
(EN)
The invention relates to a method of manufacturing a structure, comprising the following steps: a) a step of supplying an active element which is provided with a front face and a rear face (120) which are connected by a contour (130); c) a step of assembling the front face and a main face (210) of a support (200); e) a step of filling an interconnecting space between the front face (110) and the main face (210) with an adhesive (500); the method being characterised in that it further comprises a step b), which is carried out before the step c), of forming, by a method other than a plasma process, a first passivation layer which covers the contour (130) and which is made of a first compound which allows the wetting of the contour (130) by the adhesive (500) to be limited with respect to the front face and the main face (210).
(FR)
L'invention concerne un procédé de fabrication d'une structure comprenant les étapes suivantes : a) une étape de fourniture d'un élément actif pourvu d'une face avant et arrière (120) reliées par un contour (130); c) une étape d'assemblage de la face avant et d'une face principale (210) d'un support (200); e) une étape de remplissage d'un espace d'interconnexions entre la face avant (110) et la face principale (210),avec une colle (500); le procédé étant caractérisé en ce qu'il comprend en outre une étape b), exécutée avant l'étape c), de formation, par une méthode autre qu'un procédé plasma, d'une première couche de passivation recouvrant le contour (130), et faite d'un premier composé permettant de limiter le mouillage dudit contour (130) par la colle (500) au regard de la face avant et de la face principale (210).
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