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1. WO2020193876 - LOW-COST PROCESS FOR PRODUCING A MODULAR POWER SWITCHING ELEMENT

Publication Number WO/2020/193876
Publication Date 01.10.2020
International Application No. PCT/FR2020/000067
International Filing Date 25.03.2020
IPC
H01L 23/538 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
538the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
065the devices being of a type provided for in group H01L27/78
H01L 25/11 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
10the devices having separate containers
11the devices being of a type provided for in group H01L29/78
H01L 21/48 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/06-H01L21/326201
CPC
H01L 21/4846
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
4814Conductive parts
4846Leads on or in insulating or insulated substrates, e.g. metallisation
H01L 23/5384
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
538the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
5384Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
H01L 25/072
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/00
072the devices being arranged next to each other
H01L 25/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L51/00
H01L 25/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
50Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
Applicants
  • INSTITUT VEDECOM [FR]/[FR]
  • ELVIA PCB [FR]/[FR]
Inventors
  • BELNOUE, Olivier
  • KIEL, Friedbald
Agents
  • PSA AUTOMOBILES SA - MME CATHERINE MENES
Priority Data
190322928.03.2019FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) LOW-COST PROCESS FOR PRODUCING A MODULAR POWER SWITCHING ELEMENT
(FR) PROCÉDÉ DE FABRICATION BAS COUT D'UN ÉLÉMENT MODULAIRE DE COMMUTATION DE PUISSANCE
Abstract
(EN)
The process of the invention is designed to produce a modular power switching element (MP) comprising first and second laminated blocks (BL, BH) between which at least one transistor chip (CP-i, CP2) is held. The first and second laminated blocks comprise, respectively, first and second busbars (BBL, BBH) on which dielectric and conductive internal layers are laminated. The process comprises, prior to laminating the first and second laminated blocks, the parallel production of a first blank of the first laminated block (BL) and of a second blank of the second laminated block (BH), this parallel production comprising at least one operation of punching and/or stamping using a punch forming at least one opening (OR1, OR2) in the first busbar and/or the second busbar, forming a dielectric layer (DL1, DL2) covering the inside of the opening and metallizing (CU2, CU3) the inside of the opening including the dielectric layer.
(FR)
Le procédé de l'invention Le procédé est conçu pour la fabrication d'un élément modulaire de commutation de puissance (MP) comprenant des premier et deuxième blocs stratifiés (BL, BH) entre lesquels est enserrée au moins une puce de transistor (CP-i, CP2). Les premier et deuxième blocs stratifiés comportent respectivement des premier et deuxième bus-barres (BBL, BBH) sur lesquels sont stratifiées des couches internes diélectriques et conductrices. Le procédé comprend, préalablement à la stratification des premier et deuxième blocs stratifiés, la fabrication en parallèle d'une première ébauche du premier bloc stratifié (BL) et d'une deuxième ébauche du deuxième bloc stratifié (BH), cette fabrication en parallèle comprenant au moins une opération de poinçonnage et/ou matriçage à l'emporte-pièce réalisant au moins un orifice (OR1, OR2) dans le premier bus-barre et/ou le deuxième bus-barre, une réalisation d'une couche diélectrique (DL1, DL2) recouvrant l'intérieur de l'orifice et une métallisation (CU2, CU3) de l'intérieur de l'orifice incluant la couche diélectrique.
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