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1. WO2020193786 - ULTRA-FAST MODULATOR FOR MODULATING THE AMPLITUDE OF LASER RADIATION

Publication Number WO/2020/193786
Publication Date 01.10.2020
International Application No. PCT/EP2020/058841
International Filing Date 27.03.2020
IPC
G02F 1/017 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
015based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
017Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
CPC
G02F 1/017
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
015based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
017Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
G02F 2001/01783
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
015based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
017Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
01783Quantum wire
Applicants
  • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE [FR]/[FR]
  • UNIVERSITE PARIS-SUD [FR]/[FR]
Inventors
  • COLOMBELLI, Raffaele
  • PIROTTA, Stefano
  • TRAN, Ngoc Linh
Agents
  • JOUBERT, Cécile
Priority Data
FR190321127.03.2019FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) ULTRA-FAST MODULATOR FOR MODULATING THE AMPLITUDE OF LASER RADIATION
(FR) MODULATEUR ULTRA-RAPIDE DE L'AMPLITUDE D'UN RAYONNEMENT LASER
Abstract
(EN)
Disclosed is a device (10, 100) for modulating the amplitude of incident laser radiation (1) of wavelength λí characterised in that it comprises: a metal bottom layer (3) above which there is located a semi-conductive layer (4) that contains a stack of a plurality of quantum wells, above which there is located a structured metal top layer (2), the two metal layers (2, 3) being reflective to the incident laser radiation (1), the structure of the top layer and the distance between the two metal layers L being sufficiently small for the device to form an optical microcavity having an least one resonance mode; at least some of the quantum wells, referred to as active wells, having intersubband absorption at a central wavelength λ ISB = ℎc/E ISB , the coupling between the intersubband transition at the central wavelength λ ISB and one of the modes of the microcavity resulting in the excitation of cavity polaritons and Rabi splitting at energies EISB± ħΩRabi in which Ω Rabi is the Rabi frequency; the device comprising an electric circuit (5) configured to apply two different voltage differences, V 0 and V 1 between the two metal layers, the device (4) absorbing the incident radiation (1) for the voltage difference V 0 and the device reflecting or transmitting the incident radiation for the voltage difference V 1.
(FR)
Dispositif (10, 100) de modulation de l'amplitude d'un rayonnement laser incident (1) de longueur d'onde λi caractérisé en ce qu'il comprend : une couche inférieure métallique (3) au-dessus de laquelle se trouve une couche semi-conductrice (4) contient un empilement d'une pluralité de puits quantiques, au-dessus de laquelle se trouve une couche supérieure métallique structurée (2), les deux couches métalliques (2, 3) étant réfléchissantes au rayonnement laser incident (1), la structuration de la couche supérieure et la distance entre lesdites deux couches métalliques L étant suffisamment petite pour que le dispositif forme une microcavité optique présentant au moins un mode de résonnance; au moins une partie des puits quantiques dits puits actifs présentant une absorption intersousbande à une longueur d'onde centrale λISB = ℎc/EISB, le couplage entre ladite transition intersoubsande à ladite longueur d'onde centrale λISB et un des modes de la microcavité entrainant l'excitation de polaritons de cavités et un dédoublement de Rabi aux énergies EISB± ħΩRabi avec ΩRabi la fréquence de Rabi; ledit dispositif comprenant un circuit électrique (5) configuré pour appliquer deux différences de tension distinctes, V0 et V1 entre les deux couches métalliques, le dispositif (4) absorbant le rayonnement incident (1) pour la différence de tension V0 et le dispositif réfléchissant ou transmettant le rayonnement incident pour la différence de tension V1.
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