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1. WO2020193633 - OPTICAL ARRANGEMENT AND LITHOGRAPHY APPARATUS

Publication Number WO/2020/193633
Publication Date 01.10.2020
International Application No. PCT/EP2020/058366
International Filing Date 25.03.2020
IPC
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G02B 26/08 2006.01
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
26Optical devices or arrangements using movable or deformable optical elements for controlling the intensity, colour, phase, polarisation or direction of light, e.g. switching, gating or modulating
08for controlling the direction of light
CPC
G02B 26/0833
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
26Optical devices or arrangements using movable or deformable optical elements for controlling the intensity, colour, phase, polarisation or direction of light, e.g. switching, gating, modulating
08for controlling the direction of light
0816by means of one or more reflecting elements
0833the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
G03F 7/70075
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70058Mask illumination systems
70075Homogenization of illumination intensity in the mask plane, by using an integrator, e.g. fly's eye lenses, facet mirrors, glass rods, by using a diffusive optical element or by beam deflection
G03F 7/70116
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70058Mask illumination systems
70091Illumination settings, i.e. intensity distribution in the pupil plane, angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole, quadrupole; Partial coherence control, i.e. sigma or numerical aperture [NA]
70116Off-axis setting using a programmable means, e.g. LCD or DMD
G03F 7/7085
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
708Construction of apparatus, e.g. environment, hygiene aspects or materials
7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
Applicants
  • CARL ZEISS SMT GMBH [DE]/[DE]
Inventors
  • HORN, Jan
  • RICHTER, Stefan
Agents
  • HORN KLEIMANN WAITZHOFER PATENTANWÄLTE PARTG MBB
Priority Data
10 2019 204 165.526.03.2019DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) OPTISCHE ANORDNUNG UND LITHOGRAPHIEANLAGE
(EN) OPTICAL ARRANGEMENT AND LITHOGRAPHY APPARATUS
(FR) AGENCEMENT OPTIQUE ET INSTALLATION DE LITHOGRAPHIE
Abstract
(DE)
Optische Anordnung (200) für eine Lithographieanlage (100A, 100B), aufweisend ein Mikrosystem (202) mit einem Spiegelarray (204), wobei ein jeweiliger Spiegel (206) des Spiegelarrays (204) dazu eingerichtet ist, Arbeitslicht (108A, 108B) der Lithographieanlage (100A, 100B) an seiner Vorderseite (208) sowie einen Mess¬ strahl (L, 224) an seiner Rückseite (220) zu reflektieren, eine oder mehrere Strahlenquellen (226, 310), welche außerhalb des Mikrosystems (202) vorgesehen und dazu eingerichtet sind, den je weihgen Messstrahl (L, 224) bereitzustellen, und eine oder mehrere Sensoreinheiten (230, 804, 1200), welche dazu eingerich¬ tet sind, einen Kippwinkel (a) eines jeweiligen Spiegels (206) in Abhängigkeit des jeweils reflektierten Messstrahls (L', 224') zu erfassen.
(EN)
An optical arrangement (200) for a lithography apparatus (100A, 100B), comprising a microsystem (202) having a mirror array (204), wherein a respective mirror (206) of the mirror array (204) is configured to reflect working light (108A, 108B) of the lithography apparatus (100A, 100B) at its front side (208) and a measurement beam (L, 224) at its rear side (220), one or more radiation sources (226, 310) provided outside the microsystem (202) and configured to provide the respective measurement beam (L, 224), and one or more sensor units (230, 804, 1200) configured to detect a tilt angle (a) of a respective mirror (206) depending on the respectively reflected measurement beam (L', 224').
(FR)
L'invention concerne un agencement optique (200) pour une installation de lithographie (100A, 100B), comprenant un microsystème (202) doté d'un réseau de miroirs (204), un miroir (206) respectif du réseau de miroirs (204) étant conçu pour réfléchir la lumière de travail (108A, 108B) de l'installation de lithographie (100A, 100B) sur sa face avant (208) et aussi pour réfléchir un faisceau de mesure (L, 224) sur sa face arrière (220), une ou plusieurs sources de rayonnement (226, 310), lesquelles sont prévues à l'extérieur du microsystème (202) et sont conçues pour fournir le faisceau de mesure (L, 224) respectif, et une ou plusieurs unités de détection (230, 804, 1200), qui sont conçues pour détecter un angle d'inclinaison (a) d'un miroir (206) respectif en fonction du faisceau de mesure réfléchi (L', 224') respectif.
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