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1. WO2020193527 - LIGHT-EMITTING SEMICONDUCTOR COMPONENT

Publication Number WO/2020/193527
Publication Date 01.10.2020
International Application No. PCT/EP2020/058119
International Filing Date 24.03.2020
IPC
H01L 33/58 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
H01L 25/16 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
16the devices being of types provided for in two or more different main groups of groups H01L27/-H01L51/139
H01L 33/60 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
60Reflective elements
CPC
H01L 25/167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
16the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 ; and H01L51/00; , e.g. forming hybrid circuits
167comprising optoelectronic devices, e.g. LED, photodiodes
H01L 33/58
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
H01L 33/60
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
60Reflective elements
Applicants
  • ROBERT BOSCH GMBH [DE]/[DE]
Inventors
  • HOMOTH, Jan
  • WINKLER, Jonathan
Priority Data
10 2019 204 358.528.03.2019DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) LICHTEMITTIERENDES HALBLEITERBAUELEMENT
(EN) LIGHT-EMITTING SEMICONDUCTOR COMPONENT
(FR) COMPOSANT À SEMI-CONDUCTEUR ÉLECTROLUMINESCENT
Abstract
(DE)
Halbleiterbauelement (100) mit einem p/n-Übergang und einem Halbleitermaterial (101), wobei das Halbleitermaterial (101) eine erste Seite aufweist, wobei auf der ersten Seite eine erste Metallschicht (103) angeordnet ist, dadurch gekennzeichnet, dass die erste Metallschicht (103) eine Öffnung (104) aufweist, sodass vom p/n-Übergang in leitendem Zustand emittiertes Licht auskoppelbar ist.
(EN)
The invention relates to a semiconductor component (100) having a p/n junction and a semiconductor material (101), the semiconductor material (101) having a first side, wherein on the first side, a first metal layer (103) is arranged, characterized in that the first metal layer (103) has an opening (104) such that so that light emitted from the p/n junction in the conducting state can be coupled out.
(FR)
L'invention concerne un composant (100) à semi-conducteur ayant une jonction p/n et un matériau (101) semi-conducteur, le matériau (101) semi-conducteur ayant une première face, une première couche (103) métallique étant disposée sur la première face, caractérisé en ce que la première couche (103) métallique comporte une ouverture (104) de sorte que de la lumière émise par la jonction p/n à l'état conducteur peut être sortie.
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