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1. WO2020193494 - HEATING DEVICE FOR A SUSCEPTOR OF A CVD REACTOR

Publication Number WO/2020/193494
Publication Date 01.10.2020
International Application No. PCT/EP2020/058049
International Filing Date 24.03.2020
IPC
C23C 16/46 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
46characterised by the method used for heating the substrate
C23C 14/54 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
54Controlling or regulating the coating process
C30B 25/10 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
10Heating of the reaction chamber or the substrate
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H05B 3/26 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
3Ohmic-resistance heating
20Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
22non-flexible
26heating conductor mounted on insulating base
CPC
C23C 14/541
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
54Controlling or regulating the coating process
541Heating or cooling of the substrates
C23C 16/46
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
46characterised by the method used for heating the substrate
C30B 25/10
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
10Heating of the reaction chamber or the substrate
H01L 21/67103
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67103mainly by conduction
H05B 3/26
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
3Ohmic-resistance heating
20Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
22non-flexible
26heating conductor mounted on insulating base
Applicants
  • AIXTRON SE [DE]/[DE]
Inventors
  • JIANG, Honggen
  • CRAWLEY, Fred Michael Andrew
Agents
  • GRUNDMANN, Dirk
  • MÜLLER, Enno
  • BRÖTZ, Helmut
  • BOURREE, Hendrik
Priority Data
10 2019 107 857.127.03.2019DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) HEIZVORRICHTUNG FÜR EINEN SUSZEPTOR EINES CVD-REAKTORS
(EN) HEATING DEVICE FOR A SUSCEPTOR OF A CVD REACTOR
(FR) DISPOSITIF DE CHAUFFAGE DESTINÉ À UN SUSCEPTEUR D'UN RÉACTEUR CVD
Abstract
(DE)
Die Erfindung betrifft eine Vorrichtung (1)zum Beheizen eines Suszeptors eines CVD-Reaktors (10).Es sind drei, im Wesentlichen gleich große um ein Zentrum(Z) angeordnete Heizflächen (2) vorgesehen.Die Heizflächen (2) werden von elektrisch leitend, in einer Ebene unter Ausbildung nebeneinander verlaufender Schenkel (4) mäanderförmig sich erstreckenden Heizelementen (3) ausgebildet.Wesentlich ist, dass die Schenkel (4) Schenkelabschnitte (5) aufweisen, die parallel zu Begrenzungslinien (a, b, c) verlaufen, die entlang der sich in Radialrichtung erstreckenden Grenzenzwischen zwei Heizflächen (2) verlaufen. Eine derart ausgebildete Heizzonen-Anordnung ist von einer kreisförmigen zweiten Heizanordnung umgeben.
(EN)
The invention relates to a device (1) for heating a susceptor of a CVD reactor (10).Three heating faces (2) of substantially equal size are arranged around a centre (Z).The heating faces (2) are formed by electrically conductive heating elements (3) which extend in a serpentine manner in a plane to form limbs (4) running next to one another.The essential feature is that the limbs (4) have limb sections (5) which run parallel to delimiting lines (a, b, c) which run along the boundaries, extending in the radial direction, between two heating faces (2). A heating zone arrangement of this type is surrounded by a circular second heating arrangement.
(FR)
L'invention concerne un dispositif (1) permettant de chauffer un suscepteur d'un réacteur CVD (10). Trois surfaces de chauffage (2) de taille sensiblement identique et agencées autour d'un centre (Z) sont prévues. Les surfaces de chauffage (2) sont constituées par des éléments de chauffage (3) électroconducteurs s'étendant en forme de méandres dans un plan en formant des branches s'étendant l'un à côté de l'autre (4). Il est essentiel que les branches (4) présentent des sections de branche (5) parallèles à des lignes de délimitation (a, b, c) qui sont orientées le long des délimitations s'étendant en direction radiale entre deux surfaces de chauffage (2). Un agencement de zones de chauffage constitué ainsi est entouré par un second agencement de chauffage circulaire.
Latest bibliographic data on file with the International Bureau