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1. WO2020193433 - A DISTRIBUTED FEEDBACK LASER

Publication Number WO/2020/193433
Publication Date 01.10.2020
International Application No. PCT/EP2020/057875
International Filing Date 20.03.2020
IPC
H01S 5/022 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
H01S 5/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
12the resonator having a periodic structure, e.g. in distributed feed-back  lasers
H01S 5/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
H01S 5/028 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
028Coatings
H01S 5/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
H01S 5/323 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- hetero-structures
323in AIIIBV compounds, e.g. AlGaAs-laser
CPC
G02B 2006/12061
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides
10of the optical waveguide type
12of the integrated circuit kind
12035Materials
12061Silicon
G02B 2006/12078
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides
10of the optical waveguide type
12of the integrated circuit kind
12035Materials
12078Gallium arsenide or alloys (GaAs, GaAlAs, GaAsP, GaInAs)
G02B 2006/12121
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides
10of the optical waveguide type
12of the integrated circuit kind
12083Constructional arrangements
12121Laser
G02B 6/12019
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides
10of the optical waveguide type
12of the integrated circuit kind
12007forming wavelength selective elements, e.g. multiplexer, demultiplexer
12009comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
12019characterised by the optical interconnection to or from the AWG devices, e.g. integration or coupling with lasers or photodiodes
H01S 3/0675
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
06Construction or shape of active medium
063Waveguide lasers, ; i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
067Fibre lasers
0675Resonators including a grating structure, e.g. distributed Bragg reflectors [DBR] or distributed feedback [DFB] fibre lasers
H01S 5/021
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
0206Substrates, e.g. growth, shape, material, removal or bonding;
021Silicon based substrates
Applicants
  • ROCKLEY PHOTONICS LIMITED [GB]/[GB]
Inventors
  • ALALUSI, Mazin
  • MASUDA, Kevin
  • SRINIVASAN, Pradeep
Agents
  • MEWBURN ELLIS LLP
Priority Data
62/822,63522.03.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A DISTRIBUTED FEEDBACK LASER
(FR) LASER À RÉTROACTION RÉPARTIE
Abstract
(EN)
A Distributed Feedback Laser (DFB) mounted on a Silicon Photonic Integrated Circuit (Si PIC), the DFB having a longitudinal length which extends from a first end of the DFB laser to a second end of the DFB laser, the DFB laser comprising: an epi stack, the epi stack comprising: one or more active material layers; a layer comprising a partial grating, the partial grating extending from the second end of the DFB laser, only partially along the longitudinal length of the DFB laser such that it does not extend to the first end of the DFB laser; a highly reflective medium located at the first end of the DFB laser; and a back facet located at the second end of the DFB laser.
(FR)
Laser à rétroaction répartie (DFB) monté sur un circuit intégré photonique au silicium (Si PIC), le DFB ayant une longueur longitudinale qui s'étend d'une première extrémité du laser DFB à une seconde extrémité du laser DFB, le laser DFB comprenant : une pile épitaxiale, la pile épitaxiale comprenant : une ou plusieurs couches de matériau actif; une couche comprenant un réseau partiel, le réseau partiel s'étendant à partir de la seconde extrémité du laser DFB, seulement partiellement le long de la longueur longitudinale du laser DFB de telle sorte qu'Il ne s'étend pas jusqu'à la première extrémité du laser DFB; un milieu hautement réfléchissant situé au niveau de la première extrémité du laser DFB; et une facette arrière située au niveau de la seconde extrémité du laser DFB.
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