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1. WO2020193408 - METHOD FOR PRODUCING A CONNNECTION STRUCTURE AND SEMICONDUCTOR COMPONENT

Publication Number WO/2020/193408
Publication Date 01.10.2020
International Application No. PCT/EP2020/057784
International Filing Date 20.03.2020
IPC
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
H01L 21/288 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283Deposition of conductive or insulating materials for electrodes
288from a liquid, e.g. electrolytic deposition
CPC
H01L 21/2885
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
288from a liquid, e.g. electrolytic deposition
2885using an external electrical current, i.e. electro-deposition
H01L 21/486
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
4814Conductive parts
4846Leads on or in insulating or insulated substrates, e.g. metallisation
486Via connections through the substrate with or without pins
H01L 21/76898
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76898formed through a semiconductor substrate
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE]
Inventors
  • RUDOLPH, Andreas
  • BAUR, Teresa
  • KLEMP, Christoph
Agents
  • MÜLLER HOFFMANN & PARTNER PATENTANWÄLTE MBB
Priority Data
10 2019 107 760.526.03.2019DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN ZUR HERSTELLUNG EINER VERBINDUNGSSTRUKTUR UND HALBLEITERBAUELEMENT
(EN) METHOD FOR PRODUCING A CONNNECTION STRUCTURE AND SEMICONDUCTOR COMPONENT
(FR) PROCÉDÉ DE FABRICATION D’UNE STRUCTURE DE CONNEXIONS ET COMPOSANT SEMI-CONDUCTEUR
Abstract
(DE)
Ein Verfahren zur Herstellung einer Verbindungsstruktur umfasst das Ausbilden einer Öffnung (15) in einer ersten Hauptoberfläche (101) eines ersten Substrats (100), das Ausbilden einer galvanischen Keimschicht (120) über einer ersten Hauptoberfläche (111) eines Trägersubstrats (110) und das Verbinden der ersten Hauptoberfläche (101) des ersten Substrats (100) mit der ersten Hauptoberfläche (111) des Trägersubstrats (110), so dass die galvanische Keimschicht (120) zwischen der ersten Hauptoberfläche (101) des ersten Substrats (100) und der ersten Hauptoberfläche (111) des Trägersubstrats (110) angeordnet ist. Das Verfahren umfasst ferner galvanisches Ausbilden eines leitenden Materials (160) über der galvanischen Keimschicht (120).
(EN)
A method for producing a connection structure comprises the forming of an opening (15) in a first main surface (101) of a first substrate (100), the forming of a galvanic seed layer (120) over a first main surface (111) of a carrier substrate (110), and the connection of the first main surface (101) of the first substrate (100) to the first main surface (111) of the carrier substrate (110) so that the galvanic seed layer (120) is arranged between the first main surface (101) of the first substrate (100) and the first main surface (111) of the carrier substrate (110). The method also comprises the galvanic formation of a conductive material (160) via the galvanic seed layer (120).
(FR)
La présente invention concerne un procédé de fabrication d’une structure de connexions qui comprend la formation d’une ouverture (15) dans une première surface principale (101) d’un premier substrat (100), la formation d’une couche germe galvanique (120) au-dessus d’une première surface principale (111) d’un substrat porteur (110) et la connexion de la première surface principale (101) du premier substrat (100) à la première surface principale (111) du substrat porteur (110) de sorte que la couche germe galvanique (120) est disposée entre la première surface principale (101) du premier substrat (100) et la première surface principale (111) du substrat porteur (110). Le procédé comprend en outre la formation galvanique d’un matériau conducteur (160) au-dessus de la couche germe galvanique (120).
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