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1. WO2020193233 - LIGHT-EMITTING SEMICONDUCTOR COMPONENT, METHOD FOR PRODUCING A LIGHT-EMITTING SEMICONDUCTOR COMPONENT, AND USE OF THE LIGHT-EMITTING SEMICONDUCTOR COMPONENT

Publication Number WO/2020/193233
Publication Date 01.10.2020
International Application No. PCT/EP2020/056914
International Filing Date 13.03.2020
IPC
H01L 33/44 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/20 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
H01L 33/50 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
50Wavelength conversion elements
CPC
H01L 2933/0025
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0025relating to coatings
H01L 2933/0083
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0083Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
H01L 33/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
H01L 33/44
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
50Wavelength conversion elements
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE]
Inventors
  • TANGRING, Ivar
Agents
  • EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Priority Data
10 2019 107 428.222.03.2019DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) LICHT EMITTIERENDES HALBLEITERBAUELEMENT, VERFAHREN ZUR HERSTELLUNG EINES LICHT EMITTIERENDEN HALBLEITERBAUELEMENTS UND VERWENDUNG DES LICHT EMITTIERENDEN HALBLEITERBAUELEMENTS
(EN) LIGHT-EMITTING SEMICONDUCTOR COMPONENT, METHOD FOR PRODUCING A LIGHT-EMITTING SEMICONDUCTOR COMPONENT, AND USE OF THE LIGHT-EMITTING SEMICONDUCTOR COMPONENT
(FR) COMPOSANT SEMI-CONDUCTEUR ÉMETTEUR DE LUMIÈRE, PROCÉDÉ DE PRODUCTION D'UN COMPOSANT SEMI-CONDUCTEUR ÉMETTEUR DE LUMIÈRE ET UTILISATION DU COMPOSANT SEMI-CONDUCTEUR ÉMETTEUR DE LUMIÈRE
Abstract
(DE)
Es wird ein Licht emittierendes Halbleiterbauelement (101) angegeben, das einen Licht emittierenden Halbleiterchip (100) mit einer Halbleiterschichtenfolge (1) mit einer Lichtauskoppelfläche (10) und einer dielektrischen Auskoppelschicht (2) unmittelbar auf der Lichtauskoppelfläche und ein Abdeckmaterial (3) mit einem transparenten Kunststoff auf der Auskoppelschicht aufweist, wobei der transparente Kunststoff einen temperaturabhängigen ersten Brechungsindex und die Auskoppelschicht einen zweiten Brechungsindex aufweist, wobei bei Raumtemperatur der erste Brechungsindex größer als der zweite Brechungsindex ist und wobei eine Differenz zwischen dem ersten Brechungsindex und dem zweiten Brechungsindex bei Raumtemperatur größer ist als bei einer maximalen Betriebstemperatur. Weiterhin werden ein Verfahren zur Herstellung des Licht emittierenden Halbleiterbauelements und eine Verwendung des Licht emittierenden Halbleiterbauelements angegeben.
(EN)
A light-emitting semiconductor component (101) is specified, comprising a light-emitting semiconductor chip (100) having a semiconductor layer sequence (1) having a light output coupling surface (10) and a dielectric output coupling layer (2) directly on the light output coupling surface, and a covering material (3) comprising a transparent plastic on the output coupling layer, wherein the transparent plastic has a temperature-dependent first refractive index and the output coupling layer has a second refractive index, wherein at room temperature the first refractive index is greater than the second refractive index, and wherein a difference between the first refractive index and the second refractive index is greater at room temperature than at a maximum operating temperature. Furthermore, a method for producing the light-emitting semiconductor component and a use of the light-emitting semiconductor component are specified.
(FR)
L'invention concerne un composant semi-conducteur émetteur de lumière (101) comprenant une puce semi-conductrice émettrice de lumière (100) comportant une séquence de couches semi-conductrices (1) comprenant une surface de sortie de lumière (10) et une couche de sortie diélectrique (2) directement sur la surface de sortie de lumière et un matériau de recouvrement (3) avec un plastique transparent sur la couche de sortie, le plastique transparent présentant un premier indice de réfraction dépendant de la température et la couche de sortie ayant un deuxième indice de réfraction. À température ambiante le premier indice de réfraction est supérieur au deuxième indice de réfraction et une différence entre le premier indice de réfraction et le deuxième indice de réfraction à température ambiante est supérieure à une température de fonctionnement maximale. L'invention concerne également un procédé de fabrication du dispositif semi-conducteur émetteur de lumière et une utilisation du dispositif semi-conducteur émetteur de lumière.
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