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1. WO2020192703 - DISPLAY SUBSTRATE AND PREPARATION METHOD THEREFOR, AND DISPLAY APPARATUS

Publication Number WO/2020/192703
Publication Date 01.10.2020
International Application No. PCT/CN2020/081194
International Filing Date 25.03.2020
IPC
H01L 23/367 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
367Cooling facilitated by shape of device
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
Applicants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
  • 成都京东方光电科技有限公司 CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 贵炳强 GUI, Bingqiang
  • 刘珂 LIU, Ke
  • 高涛 GAO, Tao
  • 黄鹏 HUANG, Peng
  • 李文强 LI, Wenqiang
Agents
  • 中科专利商标代理有限责任公司 CHINA SCIENCE PATENT & TRADEMARK AGENT LTD.
Priority Data
201910244490.228.03.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) DISPLAY SUBSTRATE AND PREPARATION METHOD THEREFOR, AND DISPLAY APPARATUS
(FR) SUBSTRAT D'AFFICHAGE ET SON PROCÉDÉ DE PRÉPARATION, ET APPAREIL D'AFFICHAGE
(ZH) 显示基板及其制备方法、显示装置
Abstract
(EN)
Provided are a display substrate and a preparation method therefor, and a display apparatus. The display substrate comprises a base substrate; an insulating layer arranged on the base substrate; a thin film transistor arranged on the side, away from the base substrate, of the insulating layer, wherein the thin film transistor comprises an active layer, and the active layer comprises a channel region of the thin film transistor; and a heat conducting structure positioned between the thin film transistor and the base substrate, wherein the heat conduction performance of the heat conducting structure is better than the heat conduction performance of the insulating layer.
(FR)
L’invention concerne un substrat d’affichage ainsi qu'un procédé de préparation associé et un appareil d’affichage. Le substrat d'affichage comprend un substrat de base ; une couche isolante disposée sur le substrat de base ; un transistor à couches minces disposé sur le côté, à l'opposé du substrat de base, de la couche isolante, le transistor à couches minces comprenant une couche active, et la couche active comprend une région de canal du transistor à couches minces ; et une structure conductrice de chaleur positionnée entre le transistor à couches minces et le substrat de base, les performances de conduction thermique de la structure thermoconductrice étant meilleures que les performances de conduction thermique de la couche isolante.
(ZH)
提供一种显示基板及其制备方法、显示装置。所述显示基板包括:衬底基板;设置在所述衬底基板上的绝缘层;设置在所述绝缘层远离所述衬底基板一侧的薄膜晶体管,所述薄膜晶体管包括有源层,所述有源层包括所述薄膜晶体管的沟道区域;和位于所述薄膜晶体管与所述衬底基板之间的导热结构,其中,所述导热结构的导热性能优于所述绝缘层的导热性能。
Also published as
Latest bibliographic data on file with the International Bureau