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1. WO2020192569 - SCHOTTKY-TYPE HETEROJUNCTION STRUCTURE, METHOD OF MAKING THE SAME AND SCHOTTKY BARRIER DIODE DEVICE INCLUDING THE SAME


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INTERNATIONAL SEARCH REPORT (ISR)
Part 1:  1  2  3  4  5  6          Part 2:  A  B  C  D  E 
International application No. Applicant's or agent's file reference
PCT/CN2020/080341 14655PONJU
International filing date (day/month/year) (Earliest) Priority Date (day/month/year)
20 March 2020 27 March 2019
Applicant
NANJING UNIVERSITY
FOR FURTHER ACTION: See Form PCT/ISA/220 as well as, where applicable, item 5 below.
This international search report has been prepared by this International Searching Authority and is transmitted to the applicant according to Article 18. A copy is being transmitted to the International Bureau.
It is also accompanied by a copy of each prior art document cited in this report.
1. Basis of the report
a. With regard to the language, the international search was carried out on the basis of:
the international application in the language in which it was filed.
a translation of the international application into                                          which is the language of a translation furnished for the purposes of international search (Rules 12.3(a) and 23.1(b)).
b.
This international search report has been established taking into account the rectification of an obvious mistake authorized by or notified to this Authority under Rule 91 (Rule 43.6bis(a)).
c.
With regard to any nucleotide and/or amino acid sequence disclosed in the international application, the international search was carried out on the basis of a sequence listing:
2. Certain claims were found unsearchable
3. Unity of invention is lacking
4. Title of the invention
The text is approved as submitted by the applicant.
The text has been established by this Authority to read as follows:
5. Abstract
The text is approved as submitted by the applicant.
The text has been established, according to Rule 38.2, by this Authority as it appears in Box No. IV. The applicant may, within one month from the date of mailing of this international search report, submit comments to this Authority.
6. Drawings
a.
The figure of the drawings to be published with the abstract is Figure No.     FIG.1    
as suggested by the applicant.
as selected by this Authority, because the applicant failed to suggest a figure.
as selected by this Authority, because this figure better characterizes the invention.
b.
none of the figures is to be published with the abstract.

A. CLASSIFICATION OF SUBJECT MATTER

According to International Patent Classification (IPC) or to both national classification and IPC

B. FIELDS SEARCHED

Minimum documentation searched (classification system followed by classification symbols):
     H01L
Documentation searched other than minimum documentation to the extent that such documents are included in the fields searched:
Electronic data base consulted during the international search (name of data base and, where practicable, search terms used):
DWPI;CNABS;SIPOABS;CNTXT;CNKI;IEEE;Elsevier: semiconductor, semimetal, semimetallic, schottky, diode?, heterojunction?, heterostructure?, barrier, rare w earth, compound?, element, thickness, buffer, protect+, electrode, group

C. DOCUMENTS CONSIDERED TO BE RELEVANT

Category* Citation of document, with indication, where appropriate, of the relevant passages Relevant to claim No.
(1)
PX
CN 109979996 A (UNIV NANJING) 05 July 2019 (2019-07-05)
1-19
claims 1-10, paragraphs [0001]-[0065]
(2)
X
P.P. Lee et al., "Growth and characterization of DyP/GaAs and DyAs/GaAs-based heterostructures and superlattices", Physica E: Low-dimensional Systems and Nanostructures,Vol. 2, No. 1-4, 15 July 1998 (1998-07-15),
1-19
pages 358-362, figs 1-6
(3)
X
M. Tanaka et al., "Vertical transport and large negative differential resistance of epitaxial GaAs/ErAs/GaAs buried semimetal/semiconductor heterostructures", Physica E: Low-dimensional Systems and Nanostructures,Vol. 7, No. 3-4, 31 May 2000 (2000-05-31),
1-19
pages 846-850, figs.1-3
(4)
X
CN 108899389 A (UNIV FUDAN) 27 November 2018 (2018-11-27)
1-4, 9-19
paragraphs [0011]-[0016], fig.1
(5)
A
US 9431529 B2 (SAMSUNG ELECTRONICS CO LTD) 30 August 2016 (2016-08-30)
1-19
full text
(6)
A
US 6087702 A (NATIONAL SCIENCE COUNCIL) 11 July 2000 (2000-07-11)
1-19
full text
(7)
A
WO 2011115891 A2 (UNIVERSITY OF FLORIDA RESEARCH FOUNDATION INC. ET AL.) 22 September 2011 (2011-09-22)
1-19
full text
(8)
A
US 5847437 A (NATIONAL SCIENCE COUNCIL) 08 December 1998 (1998-12-08)
1-19
full text
*
Special categories of cited documents:
"A"
document defining the general state of the art which is not considered to be of particular relevance
"D"
document cited by the applicant in the international application
"E"
earlier application or patent but published on or after the international filing date
"L"
document which may throw doubts on priority claim(s) or which is cited to establish the publication date of another citation or other special reason (as specified)
"O"
document referring to an oral disclosure, use, exhibition or other means
"P"
document published prior to the international filing date but later than the priority date claimed
"T"
later document published after the international filing date or priority date and not in conflict with the application but cited to understand the principle or theory underlying the invention
"X"
document of particular relevance; the claimed invention cannot be considered novel or cannot be considered to involve an inventive step when the document is taken alone
"Y"
document of particular relevance; the claimed invention cannot be considered to involve an inventive step when the document is combined with one or more other such documents, such combination being obvious to a person skilled in the art
"&"
document member of the same patent family

D. INFORMATION ON PATENT FAMILY MEMBERS

Patent document cited in search report Publication date
(day/month/year)
Patent family member(s) Publication date
(day/month/year)
CN 109979996 A
05 July 2019
None
CN 108899389 A
27 November 2018
None
US 9431529 B2
30 August 2016
KR 20160030060 A
US 2016071970 A1
16 March 2016
10 March 2016
US 6087702 A
11 July 2000
TW 367626 B
21 August 1999
WO 2011115891 A2
22 September 2011
US 2015053926 A1
US 2013001516 A1
US 9362365 B2
US 8890277 B2
WO 2011115891 A3
26 February 2015
03 January 2013
07 June 2016
18 November 2014
22 December 2011
US 5847437 A
08 December 1998
US 6225200 B1
01 May 2001
Name and mailing address of the ISA/:
National Intellectual Property Administration, PRC
6, Xitucheng Rd., Jimen Bridge, Haidian District, Beijing 100088
China
Facsimile No. (86-10)62019451
Date of the actual completion of the international search:
09 May 2020
Date of mailing of the international search report:
26 May 2020
Authorized officer:
ZHEN,Lijuan
Telephone No. (86-10)62411856
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