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1. WO2020192569 - SCHOTTKY-TYPE HETEROJUNCTION STRUCTURE, METHOD OF MAKING THE SAME AND SCHOTTKY BARRIER DIODE DEVICE INCLUDING THE SAME

Publication Number WO/2020/192569
Publication Date 01.10.2020
International Application No. PCT/CN2020/080341
International Filing Date 20.03.2020
IPC
H01L 29/47 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
43characterised by the materials of which they are formed
47Schottky barrier electrodes
H01L 21/285 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283Deposition of conductive or insulating materials for electrodes
285from a gas or vapour, e.g. condensation
H01L 29/872 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
872Schottky diodes
CPC
H01L 21/28581
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
285from a gas or vapour, e.g. condensation
28506of conductive layers
28575on semiconductor bodies comprising AIIIBV compounds
28581Deposition of Schottky electrodes
H01L 29/475
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
47Schottky barrier electrodes
475on AIII-BV compounds
H01L 29/872
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
861Diodes
872Schottky diodes
Applicants
  • NANJING UNIVERSITY [CN]/[CN]
Inventors
  • LU, Hong
  • DING, Yuanfeng
  • ZHANG, Kedong
Agents
  • BEIJING ARETE INTELLECTUAL PROPERTY AGENCY
Priority Data
201910237587.027.03.2019CN
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SCHOTTKY-TYPE HETEROJUNCTION STRUCTURE, METHOD OF MAKING THE SAME AND SCHOTTKY BARRIER DIODE DEVICE INCLUDING THE SAME
(FR) STRUCTURE D'HÉTÉROJONCTION DE TYPE SCHOTTKY, SON PROCÉDÉ DE FABRICATION ET DISPOSITIF DE DIODE À BARRIÈRE SCHOTTKY LA COMPRENANT
Abstract
(EN)
A Schottky-type heterojunction structure comprises a semiconductor layer and a semimetal layer disposed on the semiconductor layer, wherein the semiconductor layer and the semimetal layer contact each other through Schottky contacts, wherein the semimetal layer includes semimetallic materials whose conduction band and valence band are overlapped or close to overlapped. The interface between the semimetal layer and the semiconductor layer shows improved quality. The Schottky barrier height of the heterojunction shows improved tunability through the modulation by the semimetal layer or the combination of the semimetal layer and the protection layer, and the interface treatments. The Schottky barrier diode (SBD) device based on this heterojunction structure has an ideal factor of about 1.05 and its noise equivalent power (NEP) is lower than 1 pW/Hz1/2.
(FR)
La présente invention concerne une structure d'hétérojonction de type Schottky comprenant une couche semi-conductrice et une couche semi-métallique disposée sur la couche semi-conductrice, la couche semi-conductrice et la couche semi-métallique étant en contact l'une avec l'autre par l'intermédiaire de contacts Schottky, la couche semi-métallique comprenant des matériaux semi-métalliques dont la bande de conduction et la bande de valence se chevauchent ou presque. L'interface entre la couche semi-métallique et la couche semi-conductrice présente une qualité améliorée. La hauteur de barrière Schottky de l'hétérojonction se prête davantage à l'ajustement par l'intermédiaire de la modulation par la couche semi-métallique ou la combinaison de la couche semi-métallique et de la couche de protection, et par les traitements d'interface. Le dispositif de diode à barrière Schottky (SBD) basé sur cette structure d'hétérojonction présente un facteur idéal d'environ 1,05 et sa puissance équivalente de bruit (NEP) est inférieure à 1 pW/Hz pW/Hz1/2.
Also published as
Latest bibliographic data on file with the International Bureau