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1. WO2020192148 - PACKAGING METHOD FOR WAFER-LEVEL INFRARED DETECTION CHIP

Publication Number WO/2020/192148
Publication Date 01.10.2020
International Application No. PCT/CN2019/119690
International Filing Date 20.11.2019
IPC
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 31/0203 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0203Containers; Encapsulations
CPC
H01L 27/14618
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14618Containers
H01L 27/14634
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14634Assemblies, i.e. Hybrid structures
H01L 27/14636
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14636Interconnect structures
H01L 27/1469
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
1469Assemblies, i.e. hybrid integration
Applicants
  • 江苏鼎茂半导体有限公司 JIANGSU PROSPER SEMICONDUCTOR INC. [CN]/[CN]
Inventors
  • 林明芳 LIN, Mingfang
  • 陈俊宇 CHEN, Junyu
Agents
  • 苏州市中南伟业知识产权代理事务所(普通合伙) CENTRAL SOUTH WELL INTELLECTUAL PROPERTY OFFICE
Priority Data
201910227181.425.03.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) PACKAGING METHOD FOR WAFER-LEVEL INFRARED DETECTION CHIP
(FR) PROCÉDÉ D'ENCAPSULATION POUR PUCE DE DÉTECTION INFRAROUGE À NIVEAU DE TRANCHE
(ZH) 一种晶圆级红外探测芯片的封装方法
Abstract
(EN)
Disclosed in the present invention is a packaging method for a wafer-level infrared detection chip, comprising the following steps: step I, providing a metal layer in a metallized region of an infrared detection chip; step II, placing a first material in an upper cavity, the first material comprising the infrared detection chip having the metal layer, and then heating the upper cavity to a first temperature and maintaining the temperature; step III, placing a second material in a lower cavity, the second material comprising an optical window and a getter, and then sequentially performing degassing treatment and activation treatment on the second material in the lower cavity; step IV, opening a shielding plate, heating a vacuum reflow welding machine to a welding temperature, and maintaining the temperature, the welding temperature being a melting point of the metal layer, the metal layer being molten at the welding temperature, and the infrared detection chip and the optical window being combined together by the molten metal layer; and step V, stopping heating the vacuum reflow welding machine, naturally cooling to room temperature, and taking out a finished product. The method is applicable to packaging of a wafer-level infrared detection chip, high in precision, and high in yield of the finished product.
(FR)
La présente invention concerne un procédé d'encapsulation pour une puce de détection infrarouge à niveau de tranche, comprenant les étapes suivantes : étape I, fournir une couche métallique dans une région métallisée d'une puce de détection infrarouge ; étape II, placer un premier matériau dans une cavité supérieure, le premier matériau comprenant la puce de détection infrarouge ayant la couche métallique, puis chauffer la cavité supérieure à une première température et maintenir la température ; étape III, mettre en place un second matériau dans une cavité inférieure, le second matériau comprenant une fenêtre optique et un getter, puis effectuer séquentiellement un traitement de dégazage et un traitement d'activation sur le second matériau dans la cavité inférieure ; étape IV, ouvrir une plaque de protection, chauffer une machine de soudage par refusion sous vide à une température de soudage, et maintenir la température, la température de soudage étant un point de fusion de la couche métallique, la couche métallique étant fondue à la température de soudage, et la puce de détection infrarouge et la fenêtre optique étant combinées ensemble par la couche métallique fondue ; et étape V, arrêter le chauffage de la machine de soudage par refusion sous vide, refroidir naturellement à température ambiante, et extraire un produit fini. Le procédé est applicable à l'encapsulation d'une puce de détection infrarouge à niveau de tranche, et permet une précision élevée et un rendement élevé du produit fini.
(ZH)
本发明公开了一种晶圆级红外探测芯片的封装方法,包括以下步骤:步骤一、在红外探测芯片的金属化区设置金属层;步骤二、向上腔体内放入第一材料,第一材料包括具有金属层的红外探测芯片;之后上腔体升温至第一温度并保温;步骤三、向下腔体内放入第二材料,第二材料包括光学窗和吸气剂,之后下腔体依次对第二材料做除气处理和激活处理;步骤四、遮板打开,真空回流焊接机升温至焊接温度并保温;焊接温度即为金属层的熔点;金属层在焊接温度下融化,而融化的金属层将红外探测芯片与光学窗结合在一起;步骤五、真空回流焊接机停止加温,自然冷却至常温,之后取出成品。其适用于晶圆级红外探测芯片封装,精度高,成品良率高。
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Latest bibliographic data on file with the International Bureau