Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020191593 - MICRO LIGHT EMITTING ASSEMBLY, MICRO LIGHT EMITTING DIODE, AND TRANSFER PRINTING METHOD FOR MICRO LIGHT EMITTING DIODE

Publication Number WO/2020/191593
Publication Date 01.10.2020
International Application No. PCT/CN2019/079577
International Filing Date 25.03.2019
IPC
H01L 33/20 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
CPC
H01L 21/6835
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6835using temporarily an auxiliary support
H01L 2221/68363
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68363used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
H01L 2221/68386
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
68386Separation by peeling
H01L 25/0753
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
0753the devices being arranged next to each other
H01L 2933/0025
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0025relating to coatings
H01L 2933/0033
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0033relating to semiconductor body packages
Applicants
  • 厦门市三安光电科技有限公司 XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 吴政 WU, Zheng
  • 詹伯祺 ZHAN, Boqi
  • 李佳恩 LEE, Chia-En
  • 徐宸科 HSU, Chen-Ke
Priority Data
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) MICRO LIGHT EMITTING ASSEMBLY, MICRO LIGHT EMITTING DIODE, AND TRANSFER PRINTING METHOD FOR MICRO LIGHT EMITTING DIODE
(FR) MICRO-ENSEMBLE ÉLECTROLUMINESCENT, MICRO-DIODE ÉLECTROLUMINESCENTE ET PROCÉDÉ D'IMPRESSION PAR TRANSFERT POUR MICRO-DIODE ÉLECTROLUMINESCENTE
(ZH) 微发光组件、微发光二极管及微发光二极管转印方法
Abstract
(EN)
A micro light emitting assembly, comprising: a base frame comprising a post structure (310); and at least one micro light emitting diode (100) connected to the base frame by means of the post structure (310) and supported by the post structure (310), wherein an end of the post structure (310) connected to the micro light emitting diode (100) is located in a recess (101) on a surface of the micro light emitting diode (100). The micro light emitting assembly reduces or eliminates a remaining portion of the post structure (310) left on the micro light emitting diode (100) after the post structure (310) has been split and separated therefrom during a transfer process, thereby preventing excessive processing residues from affecting a subsequent die-bonding process in which the micro light emitting diode (100) is attached to a circuit board.
(FR)
L'invention concerne un micro-ensemble électroluminescent, comprenant : un cadre de base comprenant une structure de montant (310); et au moins une micro-diode électroluminescente (100) connectée au cadre de base au moyen de la structure de montant (310) et supportée par la structure de montant (310), une extrémité de la structure de montant (310) connectée à la diode électroluminescente (100) étant située dans un évidement (101) sur une surface de la micro-diode électroluminescente (100). Le micro-ensemble électroluminescent réduit ou élimine une partie restante de la structure de montant (310) laissée sur la micro-diode électroluminescente (100) après que la structure de montant (310) a été repartie et séparée de celle-ci pendant un processus de transfert, empêchant ainsi des résidus de traitement excessifs d'affecter un processus de liaison de puce ultérieur dans lequel la micro-diode électroluminescente (100) est fixée à une carte de circuit imprimé.
(ZH)
一种微发光组件,包含:基架,包括柱状结构(310);至少一个微发光二极管(100),微发光二极管(100)通过柱状结构(310)与基架连接,微发光二极管(100)由柱状结构(310)提供支撑;柱状结构(310)与微发光二极管(100)连接的一端位于微发光二极管(100)表面的凹槽(101)内,该微发光组件在转移过程中,减少或者消除微发光二极管(100)上柱状结构(310)断裂残留,避免工艺残留物过高影响后续微发光二极管(100)共晶到电路板。
Also published as
CN201980003930.3
Latest bibliographic data on file with the International Bureau