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1. WO2020191590 - SEMICONDUCTOR LIGHT-EMITTING ELEMENT

Publication Number WO/2020/191590
Publication Date 01.10.2020
International Application No. PCT/CN2019/079571
International Filing Date 25.03.2019
IPC
H01L 33/14 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
CPC
H01L 27/156
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
153in a repetitive configuration, e.g. LED bars
156two-dimensional arrays
H01L 33/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/305
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
305characterised by the doping materials
H01L 33/387
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
387with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
Applicants
  • 泉州三安半导体科技有限公司 QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD [CN]/[CN]
Inventors
  • 李慧文 LI, Huiwen
  • 张东炎 ZHANG, Dongyan
  • 潘冠甫 PAN, Kuanfu
  • 黄少华 HUANG, Shaohua
  • 王笃祥 WANG, Duxiang
Priority Data
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SEMICONDUCTOR LIGHT-EMITTING ELEMENT
(FR) ÉLÉMENT ÉLECTROLUMINESCENT À SEMI-CONDUCTEUR
(ZH) 一种半导体发光元件
Abstract
(EN)
A semiconductor light-emitting element, comprising a semiconductor light-emitting sequence, the semiconductor light-emitting sequence comprising a first-type conductive semiconductor layer, a second-type conductive semiconductor layer and a light-emitting layer therebetween; a first electrode electrically connected to the first-type conductive semiconductor layer, and a second electrode electrically connected to the second-type conductive semiconductor layer; the first-type conductive semiconductor layer comprising an aluminum-gallium-indium-phosphide window layer, and the aluminum-gallium-indium-phosphide window layer being used as an ohmic contact layer for contacting the first electrode with the first-type conductive semiconductor layer. By selecting, on first electrode side of the first conductive type semiconductor layer side, aluminum-gallium-indium-phosphide as the ohmic contact layer and the window layer to replace the conventional light absorbing ohmic contact material, the light transmittance can be improved effectively.
(FR)
L'invention concerne un élément électroluminescent à semi-conducteur, comprenant une séquence d'électroluminescence à semi-conducteur, la séquence d'électroluminescence à semi-conducteur comprenant une couche semi-conductrice de premier type de conductivité, une couche semi-conductrice de second type de conductivité et une couche électroluminescente entre celles-ci ; une première électrode connectée électriquement à la couche semi-conductrice de premier type de conductivité, et une seconde électrode connectée électriquement à la couche semi-conductrice de second type de conductivité ; la couche semi-conductrice de premier type de conductivité comprenant une couche fenêtre de phosphure d'aluminium-gallium-indium, et la couche fenêtre de phosphure d'aluminium-gallium-indium étant utilisée en tant que couche de contact ohmique pour mettre en contact la première électrode avec la couche semi-conductrice de premier type de conductivité. En sélectionnant, sur le premier côté d'électrode du côté de couche semi-conductrice de premier type de conductivité, du phosphure d'aluminium-gallium-indium en tant que couche de contact ohmique et la couche de fenêtre pour remplacer le matériau de contact ohmique d'absorption de lumière classique, le facteur de transmission de lumière peut être efficacement amélioré.
(ZH)
一种半导体发光元件,其包括半导体发光序列,半导体发光序列包括第一类型导电性半导体层、第二类型导电性半导体层和两者之间的发光层;具有与第一类型导电性半导体层电性连接的第一电极,与第二类型导电性半导体层电性连接的第二电极;所述第一类型导电性半导体层包括铝镓铟磷窗口层,铝镓铟磷窗口层作为第一电极与第一类型导电性半导体层形成接触的欧姆接触层。通过第一导电类型的半导体层侧的第一电极侧选择铝镓铟磷作为欧姆接触层和窗口层,替代传统的吸光性欧姆接触材料,可以有效改善透光性。
Also published as
CN201980003929.0
Latest bibliographic data on file with the International Bureau