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1. WO2020184497 - UNDERLAYER-FILM-FORMING COMPOSITION FOR IMPRINTING, METHOD FOR PRODUCING UNDERLAYER-FILM-FORMING COMPOSITION, KIT, METHOD FOR PRODUCING PATTERN, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT

Publication Number WO/2020/184497
Publication Date 17.09.2020
International Application No. PCT/JP2020/009901
International Filing Date 09.03.2020
IPC
C08F 290/08 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
290Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
08on to polymers modified by introduction of unsaturated side groups
C08F 299/00 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
299Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
C08K 5/09 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
KUSE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES AS COMPOUNDING INGREDIENTS
5Use of organic ingredients
04Oxygen-containing compounds
09Carboxylic acids; Metal salts thereof; Anhydrides thereof
C08L 101/00 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
101Compositions of unspecified macromolecular compounds
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
B29C 59/02 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
59Surface shaping, e.g. embossing; Apparatus therefor
02by mechanical means, e.g. pressing
CPC
B29C 59/02
BPERFORMING OPERATIONS; TRANSPORTING
29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
59Surface shaping ; of articles; , e.g. embossing; Apparatus therefor
02by mechanical means, e.g. pressing
C08F 290/08
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
290Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
08on to polymers modified by introduction of unsaturated side groups
C08F 299/00
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
299Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
C08K 5/09
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
KUse of inorganic or non-macromolecular organic substances as compounding ingredients
5Use of organic ingredients
04Oxygen-containing compounds
09Carboxylic acids; Metal salts thereof; Anhydrides thereof
C08L 101/00
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
101Compositions of unspecified macromolecular compounds
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Applicants
  • 富士フイルム株式会社 FUJIFILM CORPORATION [JP]/[JP]
Inventors
  • 袴田 旺弘 HAKAMATA Akihiro
  • 後藤 雄一郎 GOTO Yuichiro
  • 下重 直也 SHIMOJU Naoya
Agents
  • 特許業務法人特許事務所サイクス SIKs & Co.
Priority Data
2019-04700214.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) UNDERLAYER-FILM-FORMING COMPOSITION FOR IMPRINTING, METHOD FOR PRODUCING UNDERLAYER-FILM-FORMING COMPOSITION, KIT, METHOD FOR PRODUCING PATTERN, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
(FR) COMPOSITION DE FORMATION DE FILM DE SOUS-COUCHE POUR IMPRESSION, PROCÉDÉ DE PRODUCTION DE COMPOSITION DE FORMATION DE FILM DE SOUS-COUCHE, KIT, PROCÉDÉ DE PRODUCTION DE MOTIF ET PROCÉDÉ DE PRODUCTION D’ÉLÉMENT SEMI-CONDUCTEUR
(JA) インプリント用の下層膜形成用組成物、下層膜形成用組成物の製造方法、キット、パターン製造方法、および半導体素子の製造方法
Abstract
(EN)
An underlayer-film-forming composition for imprinting which comprises a polymer having a polymerizable group, a chelating agent, and a solvent; a method for producing the underlayer-film-forming composition; a kit including the underlayer-film-forming composition; a method for producing a pattern using the underlayer-film-forming composition; and a method for producing a semiconductor element, the method including, as a step, the method for producing a pattern.
(FR)
L'invention concerne une composition de formation de film de sous-couche pour impression qui comprend un polymère comportant un groupe polymérisable, un agent chélatant et un solvant ; un procédé de production de la composition de formation de film de sous-couche ; un kit comprenant la composition de formation de film de sous-couche ; un procédé de production d'un motif à l'aide de la composition de formation de film de sous-couche ; et un procédé de production d'un élément semi-conducteur, le procédé comprenant, en tant qu'étape, le procédé de production d'un motif.
(JA)
重合性基を有する高分子化合物と、キレート剤と、溶剤を含有する、インプリント用の下層膜形成用組成物およびその製造方法、上記下層膜形成用組成物を含むキット、上記下層膜形成用組成物を用いたパターン製造方法、ならびに、上記パターン製造方法を工程として含む半導体素子の製造方法
Latest bibliographic data on file with the International Bureau