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1. WO2020184319 - SPUTTERING TARGET MATERIAL AND METHOD FOR PRODUCING SAME

Publication Number WO/2020/184319
Publication Date 17.09.2020
International Application No. PCT/JP2020/009049
International Filing Date 04.03.2020
IPC
C23C 14/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
C04B 35/582 2006.01
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
515based on non-oxides
58based on borides, nitrides or silicides
581based on aluminium nitride
582Composites
CPC
C23C 14/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
Applicants
  • 三井金属鉱業株式会社 MITSUI MINING & SMELTING CO., LTD. [JP]/[JP]
Inventors
  • 眞崎 貴則 Masaki, Takanori
  • 吉田 和真 Yoshida, Kazuma
Agents
  • 特許業務法人翔和国際特許事務所 SHOWA INTERNATIONAL PATENT FIRM
Priority Data
2019-04518812.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SPUTTERING TARGET MATERIAL AND METHOD FOR PRODUCING SAME
(FR) MATÉRIAU DE CIBLE DE PULVÉRISATION, ET PROCÉDÉ DE FABRICATION DE CELUI-CI
(JA) スパッタリングターゲット材及びその製造方法
Abstract
(EN)
This sputtering target material is constituted of AlN, 0.08-0.82 moles of Al with respect to one mole of AlN, and unavoidable impurities. The sputtering target material preferably has a relative density of 85-100%. The bulk resistivity is preferably not more than 1×10-1 Ω∙cm. In this method for producing a sputtering target material, AlN particles and Al particles are mixed together, at a mixing ratio of one mole of AlN and 0.08 to 0.82 moles of Al, and baking is conducted in an inert atmosphere other than a nitrogen atmosphere.
(FR)
Le matériau de cible de pulvérisation de l'invention est constitué d'un AlN, d'un Al à raison de 0,08 mole ou plus à 0,82mole ou moins pour 1 mole d'AlN, et des impuretés inévitables. De préférence, le matériau de cible de pulvérisation présente une densité relative supérieure ou égale à 85% et inférieure ou égale à 100%. Également de préférence, sa résistivité volumique est inférieure ou égale à 1×10-1Ωcm. Selon le procédé de fabrication de matériau de cible de pulvérisation de l'invention, des particules de AlN et des particules de Al sont mélangées en proportions telles que la quantité de Al est supérieure ou égale à 0,08 mole et inférieure ou égale à 0,82mole pour 1 mole de la quantité de AlN, et sont cuites sous atmosphère inerte autre qu'une atmosphère d'azote.
(JA)
本発明のスパッタリングターゲット材は、AlNと、1モルのAlNに対し、0.08モル以上0.82モル以下のAlと、不可避的不純物とからなる。スパッタリングターゲット材は相対密度が85%以上100%以下であることが好ましい。バルク抵抗率が1×10-1Ωcm以下であることも好ましい。本発明のスパッタリングターゲット材の製造方法は、AlN粒子とAl粒子とをAlNの量1モルに対しAlの量が0.08モル以上0.82モル以下となる比率で混合し、窒素雰囲気以外の不活性雰囲気で焼成する。
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