Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020179989 - DISPLAY APPARATUS USING SEMICONDUCTOR LIGHT-EMITTING DEVICES

Publication Number WO/2020/179989
Publication Date 10.09.2020
International Application No. PCT/KR2019/016978
International Filing Date 04.12.2019
IPC
H01L 27/15 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 27/12 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
H01L 29/786 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 33/42 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
40Materials therefor
42Transparent materials
H01L 33/62 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
CPC
H01L 2224/24147
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
18High density interconnect [HDI] connectors; Manufacturing methods related thereto
23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
24of an individual high density interconnect connector
241Disposition
24135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
24145the bodies being stacked
24147the HDI interconnect not connecting to the same level of the lower semiconductor or solid-state body at which the upper semiconductor or solid-state body is mounted, e.g. the upper semiconductor or solid-state body being mounted in a cavity or on a protrusion of the lower semiconductor or solid-state body
H01L 2224/245
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
18High density interconnect [HDI] connectors; Manufacturing methods related thereto
23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
24of an individual high density interconnect connector
245Material
H01L 2224/95101
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
93Batch processes
95at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
951Supplying the plurality of semiconductor or solid-state bodies
95101in a liquid medium
H01L 2224/95136
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
93Batch processes
95at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
9512Aligning the plurality of semiconductor or solid-state bodies
95136involving guiding structures, e.g. shape matching, spacers or supporting members
H01L 2224/95144
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
93Batch processes
95at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
9512Aligning the plurality of semiconductor or solid-state bodies
95143Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
95144Magnetic alignment, i.e. using permanent magnetic parts in the semiconductor or solid-state body
H01L 2224/95145
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
93Batch processes
95at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
9512Aligning the plurality of semiconductor or solid-state bodies
95143Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
95145Electrostatic alignment, i.e. polarity alignment with Coulomb charges
Applicants
  • 엘지전자 주식회사 LG ELECTRONICS INC. [KR]/[KR]
Inventors
  • 최주찬 CHOI, Juchan
Agents
  • 허용록 HAW, Yong Noke
Priority Data
10-2019-002491604.03.2019KR
Publication Language Korean (ko)
Filing Language Korean (KO)
Designated States
Title
(EN) DISPLAY APPARATUS USING SEMICONDUCTOR LIGHT-EMITTING DEVICES
(FR) APPAREIL D'AFFICHAGE UTILISANT DES DISPOSITIFS ÉLECTROLUMINESCENTS SEMICONDUCTEURS
(KO) 반도체 발광 소자를 이용한 디스플레이 장치
Abstract
(EN) A display apparatus according to an embodiment of the present invention comprises: a substrate; a power wiring and a ground wiring which are spaced apart from each other on the substrate; a driving TFT formed on the substrate and having a source terminal electrically connected to the ground wiring; at least one insulating layer formed on the substrate; and a pair of assembly electrodes spaced apart from each other between any one of the at least one insulating layer and the substrate, wherein the pair of assembly electrodes generate an electric field as voltage is applied to any one of the assembly electrodes.
(FR) Un mode de réalisation de la présente invention concerne un appareil d'affichage comprenant : un substrat ; un câblage d'alimentation et un câblage de masse qui sont espacés l'un de l'autre sur le substrat ; un TFT d'attaque formé sur le substrat et ayant une borne de source reliée électriquement au câblage de masse ; au moins une couche isolante formée sur le substrat ; et une paire d'électrodes d'assemblage espacées l'une de l'autre entre l'une quelconque desdites couches isolantes et le substrat. La paire d'électrodes d'assemblage génère un champ électrique lorsqu'une tension est appliquée à l'une quelconque des électrodes d'assemblage.
(KO) 본 발명의 실시 예에 따른 디스플레이 장치는, 기판, 상기 기판 상에 서로 이격되어 형성되는 전원 배선과 그라운드 배선, 상기 기판 상에 형성되고, 소스 단자가 상기 그라운드 배선과 전기적으로 연결되는 구동 TFT, 상기 기판 상에 형성되는 적어도 하나의 절연층, 및 상기 적어도 하나의 절연층 중 어느 하나와 상기 기판 사이에 서로 이격되어 형성되는 한 쌍의 조립 전극을 포함하고, 상기 한 쌍의 조립 전극은 어느 하나의 조립 전극에 전압이 인가됨에 따라 전기장을 발생한다.
Latest bibliographic data on file with the International Bureau